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IRFH5110PBF - HEXFET Power MOSFET

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Features

  • Features Benefits Low RDSon (< 12.4 mΩ) Low Thermal Resistance to PCB (< 1.1°C/W) 100% Rg tested Low Profile (.

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PD -96294 www.DataSheet4U.com IRFH5110PbF HEXFET® Power MOSFET VDS RDS(on) max (@VGS = 10V) 100 12.4 48 1.5 63 V mΩ nC Ω A PQFN 5X6 mm Qg (typical) RG (typical) ID (@Tc(Bottom) = 25°C) Applications • Secondary Side Synchronous Rectification • Inverters for DC Motors • DC-DC Brick Applications Features and Benefits Features Benefits Low RDSon (< 12.4 mΩ) Low Thermal Resistance to PCB (< 1.1°C/W) 100% Rg tested Low Profile (<0.
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