IRFH5110PBF Description
IRFH5110PbF HEXFET® Power MOSFET VDS RDS(on) max (@VGS = 10V) 100 12.4 48 1.5 63 V mΩ nC Ω A PQFN 5X6 mm Qg (typical) RG (typical) ID (@Tc(Bottom) = 25°C) Applications Secondary Side Synchronous Rectification Inverters for DC Motors DC-DC Brick Applications.