IRFH5110PBF
Overview
PD -96294 IRFH5110PbF HEXFET® Power MOSFET VDS RDS(on) max (@VGS = 10V) 100 12.4 48 1.5 63 V mΩ nC Ω A PQFN 5X6 mm Qg (typical) RG (typical) ID (@Tc(Bottom) = 25°C) Applications • Secondary Si...
| Part | IRFH5110PBF |
|---|---|
| Description | HEXFET Power MOSFET |
| Category | MOSFET |
| Manufacturer | International Rectifier |
| Size | 328.23 KB |
Related Datasheets
| Part Number | Manufacturer | Description |
|---|---|---|
| AP9563GH | Advanced Power Electronics Corp | P-CHANNEL ENHANCEMENT MODE POWER MOSFET |
| FCPF360N65S3R0L | onsemi | N-Channel MOSFET |
| A2SHB | HAOHAI | N-Channel MOSFET |