IRFH5406PbF
www.DataSheet4U.com
Static @ TJ = 25°C (unless otherwise specified)
BVDSS
∆ΒVDSS/∆TJ
RDS(on)
VGS(th)
∆VGS(th)
IDSS
Parameter
Drain-to-Source Breakdown Voltage
Breakdown Voltage Temp. Coefficient
Static Drain-to-Source On-Resistance
Gate Threshold Voltage
Gate Threshold Voltage Coefficient
Drain-to-Source Leakage Current
IGSS
gfs
Qg
Qgs1
Qgs2
Qgd
Qgodr
Qsw
Qoss
RG
td(on)
tr
td(off)
tf
Ciss
Coss
Crss
Gate-to-Source Forward Leakage
Gate-to-Source Reverse Leakage
Forward Transconductance
Total Gate Charge
Pre-Vth Gate-to-Source Charge
Post-Vth Gate-to-Source Charge
Gate-to-Drain Charge
Gate Charge Overdrive
Switch Charge (Qgs2 + Qgd)
Output Charge
Gate Resistance
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Min.
60
–––
–––
2.0
–––
–––
–––
–––
–––
27
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
Typ.
–––
0.07
11.4
–––
-8.6
–––
–––
–––
–––
–––
23
3.4
1.7
7.1
11
8.8
7.4
1.1
5.4
8.7
12
3.5
1256
206
92
Max. Units
Conditions
–––
–––
14.4
4.0
–––
V VGS = 0V, ID = 250uA
eV/°C Reference to 25°C, ID = 1.0mA
mΩ VGS = 10V, ID = 24A
V
mV/°C
VDS
=
VGS,
ID
=
50µA
20
250
100
-100
–––
35
µA
VDS = 60V, VGS = 0V
VDS = 60V, VGS = 0V, TJ = 125°C
nA
VGS = 20V
VGS = -20V
S VDS = 25V, ID = 24A
––– VDS = 30V
–––
–––
nC
VGS = 10V
ID = 24A
–––
–––
––– nC VDS = 16V, VGS = 0V
––– Ω
––– VDD = 30V, VGS = 10V
–––
–––
ns
ID = 24A
RG=1.7Ω
–––
––– VGS = 0V
––– pF VDS = 25V
––– ƒ = 1.0MHz
Avalanche Characteristics
Parameter
dEAS Single Pulse Avalanche Energy
IAR Avalanche Current
Typ.
–––
–––
Max.
45
24
Units
mJ
A
Diode Characteristics
Parameter
IS Continuous Source Current
(Body Diode)
ISM Pulsed Source Current
Ã(Body Diode)
VSD Diode Forward Voltage
trr Reverse Recovery Time
Qrr Reverse Recovery Charge
ton Forward Turn-On Time
Min. Typ. Max. Units
Conditions
––– ––– 40
––– ––– 160
––– ––– 1.3
MOSFET symbol
D
A
showing the
integral reverse
G
p-n junction diode.
S
eV TJ = 25°C, IS = 24A, VGS = 0V
eÖ–– 20 30 ns TJ = 25°C, IF = 24A, VDD = 30V
––– 74 111 nC di/dt = 500A/µs
Time is dominated by parasitic Inductance
Thermal Resistance
RθJC (Bottom)
RθJC (Top)
RθJA
RθJA (<10s)
f Parameter
Junction-to-Case
fJunction-to-Case
gJunction-to-Ambient
gJunction-to-Ambient
Typ.
–––
–––
–––
–––
Max.
2.7
15
35
22
Units
°C/W
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