IRFH5406PBF - HEXFET Power MOSFET

Features

Features Low RDSon (< 14.4 mΩ) Low Thermal Resistance to PCB (< 2.7°C/W) 100% Rg tested Low Profile (.

IRFH5406PBF HEXFET Power MOSFET by International Rectifier - Datasheet Preview — Datasheet preview – IRFH5406PBF

Datasheet Details

Part number	IRFH5406PBF
Manufacturer	International Rectifier (now Infineon)
File Size	327.94 KB
Description	HEXFET Power MOSFET
Datasheet	IRFH5406PBF Datasheet
Additional preview pages of the IRFH5406PBF datasheet.

📁 Similar Datasheet

IRFH4201 - Power MOSFET (Infineon)
IRFH4201PbF - Power MOSFET (Infineon)
IRFH7184PbF - Power MOSFET (Infineon)
IRFH7440PbF - Power MOSFET (Infineon)
IRFH8201PbF - MOSFET (Infineon)
IRFH8202 - MOSFET (Infineon)
IRFH8202TRPbF - MOSFET (Infineon)
IRFH8307TRPbF - Power MOSFET (Infineon)
IRFHM4226TRPbF - Power MOSFET (Infineon)
IRF-24 - Inductors (Vishay)

Other Datasheets by International Rectifier

IRFH5004PBF - HEXFET Power MOSFET
IRFH5004PBF - HEXFET Power MOSFET
IRFH5006PBF - HEXFET Power MOSFET
IRFH5007PBF - HEXFET Power MOSFET
IRFH5007PBF - HEXFET Power MOSFET
IRFH5010PBF - HEXFET Power MOSFET
IRFH5010PBF - HEXFET Power MOSFET
IRFH5015PBF - Power MOSFET

Full PDF Text Transcription

Click to expand full text

PD -96299 www.DataSheet4U.com IRFH5406PbF HEXFET® Power MOSFET VDS RDS(on) max (@VGS = 10V) 60 14.4 23 1.1 40 V mΩ nC Ω A PQFN 5X6 mm Qg (typical) RG (typical) ID (@Tc(Bottom) = 25°C) Applications • • • • Secondary Side Synchronous Rectification Inverters for DC Motors DC-DC Brick Applications Boost Converters Features and Benefits Features Low RDSon (< 14.4 mΩ) Low Thermal Resistance to PCB (< 2.7°C/W) 100% Rg tested Low Profile (<0.

Published: Jul 11, 2010 |