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International Rectifier Electronic Components Datasheet

IRFH6200PBF Datasheet

Power MOSFET

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VDS
RDS(on) max
(@VGS = 4.5V)
(@VGS = 2.5V)
Qg (typical)
RG (typical)
ID
(@Tmb = 25°C)
20
0.99
1.50
155
1.3
h100
V
mΩ
nC
Ω
A
Applications
Charge and discharge switch for battery application
Load switch for 12V (typical) bus
Hot-Swap Switch
Features
Low RDSon (0.99mΩ)
Low Thermal Resistance to PCB (0.8°C/W)
Low Profile (0.9 mm)
Industry-Standard Pinout
Compatible with Existing Surface Mount Techniques
RoHS Compliant, Halogen-Free
IRFH6200TRPbF
HEXFET® Power MOSFET
PQFN 5X6 mm
results in
Benefits
Lower Conduction Losses
Enable better thermal dissipation
Increased Power Density
Multi-Vendor Compatibility
Easier Manufacturing
Environmentally Friendlier
Base Part Number
IRFH6200PbF
Package Type
PQFN 5mm x 6mm
PQFN 5mm x 6mm
Standard Pack
Form
Quantity
Tape and Reel
4000
Tape and Reel
400
Orderable part number
IRFH6200TRPbF
IRFH6200TR2PbF
Note
EOL Notice #259
Absolute Maximum Ratings
VDS
VGS
ID @ TA = 25°C
ID @ TA = 70°C
ID @ Tmb = 25°C
ID @ Tmb = 100°C
IDM
PD @TA = 25°C
PD @Tmb = 25°C
TJ
TSTG
Parameter
Drain-to-Source Voltage
Gate-to-Source Voltage
Continuous Drain Current, VGS @ 4.5V
Continuous Drain Current, VGS @ 4.5V
Continuous Drain Current, VGS @ 4.5V
cContinuous Drain Current, VGS @ 4.5V
Pulsed Drain Current
gPower Dissipation
gPower Dissipation
gLinear Derating Factor
Operating Junction and
Storage Temperature Range
Max.
20
±12
49
40
100h
100h
400
3.6
156
0.029
-55 to + 150
Units
V
A
W
W/°C
°C
Notes  through † are on page 9
1 www.irf.com © 2015 International Rectifier
Submit Datasheet Feedback
May 19, 2015


International Rectifier Electronic Components Datasheet

IRFH6200PBF Datasheet

Power MOSFET

No Preview Available !

IRFH6200TRPbF
Static @ TJ = 25°C (unless otherwise specified)
Parameter
BVDSS
Drain-to-Source Breakdown Voltage
ΔΒVDSS/ΔTJ
Breakdown Voltage Temp. Coefficient
RDS(on)
Static Drain-to-Source On-Resistance
VGS(t h)
ΔV GS (t h)
IDSS
Gate Threshold Voltage
Gate Threshold Voltage Coefficient
Drain-to-Source Leakage Current
IGSS Gate-to-Source Forward Leakage
Gate-to-Source Reverse Leakage
gfs Forward Transconductance
Qg Total Gate Charge
Qgs Gate-to-Source Charge
Qgd Gate-to-Drain Charge
RG Gate Resistance
td(on)
Turn-On Delay Time
tr Rise Time
t d(off )
Turn-Off Delay Time
tf Fall Time
Ciss Input Capacitance
Coss Output Capacitance
Crss Reverse Transfer Capacitance
Avalanche Characteristics
Parameter
dEAS Single Pulse Avalanche Energy
™IAR Avalanche Current
Diode Characteristics
Parameter
IS Continuous Source Current
(Body Diode)
ISM Pulsed Source Current
Ù(Body Diode)
VSD Diode Forward Voltage
trr Reverse Recovery Time
Qrr Reverse Recovery Charge
Min.
20
–––
–––
–––
–––
0.5
–––
–––
–––
–––
–––
260
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
Typ.
–––
6.4
0.75
0.80
1.10
0.8
-6.6
–––
–––
–––
–––
–––
155
22
53
1.3
14
74
140
160
10890
2890
2180
Max. Units
Conditions
–––
–––
0.95
0.99
1.50
1.1
–––
V VGS = 0V, ID = 250μA
mV/°C Reference to 25°C, ID = 1mA
eVGS = 10V, ID = 50A
emΩ VGS = 4.5V, ID = 50A
eVGS = 2.5V, ID = 50A
V
mV/°C
VDS
=
VGS,
ID
=
150μA
1.0
150
100
-100
–––
230
–––
–––
μA VDS = 16V, VGS = 0V
VDS = 16V, VGS = 0V, TJ = 125°C
nA VGS = 12V
VGS = -12V
S VDS = 10V, ID = 50A
VDS = 10V
nC VGS = 4.5V
ID = 50A (See Fig.17 & 18)
––– Ω
––– VDD = 10V, VGS = 4.5V
––– ns ID = 50A
––– RG=1.0Ω
––– See Fig.15
––– VGS = 0V
––– pF VDS = 10V
––– ƒ = 1.0MHz
Typ.
–––
–––
Max.
780
30
Units
mJ
A
Min.
–––
–––
–––
–––
–––
Typ.
–––
–––
–––
86
350
Max. Units
Conditions
100 MOSFET symbol
D
A showing the
400
integral reverse
G
p-n junction diode.
S
e1.2 V TJ = 25°C, IS = 50A, VGS = 0V
130 ns TJ = 25°C, IF = 50A, VDD = 10V
525 nC di/dt = 260A/μs
Thermal Resistance
RθJ C-mb
RθJC (Top)
RθJ A
RθJA (<10s)
Parameter
Junction-to-Mounting Base
fJunction-to-Case
gJunction-to-Ambient
gJunction-to-Ambient
Typ.
0.5
–––
–––
–––
Max.
0.8
15
35
22
Units
°C/W
2 www.irf.com © 2015 International Rectifier Submit Datasheet Feedback
May 19, 2015


Part Number IRFH6200PBF
Description Power MOSFET
Maker International Rectifier
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