IRFH7110PbF
Static @ TJ = 25°C (unless otherwise specified)
Parameter
Min.
BVDSS
ΔΒVDSS/ΔTJ
RDS(on)
VGS(th)
ΔVGS(th)
IDSS
Drain-to-Source Breakdown Voltage
Breakdown Voltage Temp. Coefficient
Static Drain-to-Source On-Resistance
Gate Threshold Voltage
Gate Threshold Voltage Coefficient
Drain-to-Source Leakage Current
100
–––
–––
2.0
–––
–––
–––
IGSS
Gate-to-Source Forward Leakage
–––
Gate-to-Source Reverse Leakage
–––
gfs Forward Transconductance
74
Qg
Qgs1
Qgs2
Qgd
Qgodr
Qsw
Qoss
RG
Total Gate Charge
Pre-Vth Gate-to-Source Charge
Post-Vth Gate-to-Source Charge
Gate-to-Drain Charge
Gate Charge Overdrive
Switch Charge (Qgs2 + Qgd)
Output Charge
Gate Resistance
–––
–––
–––
–––
–––
–––
–––
–––
td(on)
Turn-On Delay Time
tr Rise Time
td(off)
Turn-Off Delay Time
tf Fall Time
Ciss Input Capacitance
Coss Output Capacitance
Crss Reverse Transfer Capacitance
–––
–––
–––
–––
–––
–––
–––
Avalanche Characteristics
Typ.
–––
0.09
10.6
3.0
-9.0
–––
–––
–––
–––
–––
58
11
3.6
16
27.4
19.6
17
0.6
11
23
22
18
3240
300
140
Max.
–––
–––
13.5
4.0
–––
20
250
100
-100
–––
87
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
Units
Conditions
V VGS = 0V, ID = 250μA
eV/°C Reference to 25°C, ID = 1.0mA
mΩ VGS = 10V, ID = 35A
V
mV/°C
VDS
=
VGS,
ID
=
100μA
μA
VDS = 100V, VGS = 0V
VDS = 100V, VGS = 0V, TJ = 125°C
nA
VGS = 20V
VGS = -20V
S VDS = 25V, ID = 35A
VDS = 50V
nC
VGS = 10V
ID = 35A
nC VDS = 16V, VGS = 0V
Ω
VDD = 50V, VGS = 10V
ns
ID = 35A
RG=1.8Ω
VGS = 0V
pF VDS = 25V
ƒ = 1.0MHz
Parameter
dEAS Single Pulse Avalanche Energy
IAR Avalanche Current
Diode Characteristics
Typ.
–––
–––
Max.
110
35
Units
mJ
A
Parameter
Min. Typ. Max. Units
Conditions
IS Continuous Source Current
(Body Diode)
ISM Pulsed Source Current
Ã(Body Diode)
VSD Diode Forward Voltage
trr Reverse Recovery Time
Qrr Reverse Recovery Charge
ton Forward Turn-On Time
i––– ––– 50
––– –––
––– –––
––– 27
––– 140
240
1.3
41
210
MOSFET symbol
A
showing the
integral reverse
G
p-n junction diode.
eV TJ = 25°C, IS = 35A, VGS = 0V
ns TJ = 25°C, IF = 35A, VDD = 50V
eÃnC di/dt = 500A/μs
Time is dominated by parasitic Inductance
D
S
Thermal Resistance
RθJC (Bottom)
RθJC (Top)
RθJA
RθJA (<10s)
Parameter
fJunction-to-Case
fJunction-to-Case
fgJunction-to-Ambient
gJunction-to-Ambient
Typ.
–––
–––
–––
–––
Max.
1.2
32
35
22
Units
°C/W
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May 13, 2014
