IRFH7885PBF Datasheet | International Rectifier

Features Low RDS(ON) (< 3.9m) Low Thermal Resistance to PCB (<0.8°C/W) 100% Rg Tested Low Profile (<1.05 mm) Industry-Standard Pinout patible with Existing Surface Mount Techniques Ro HS pliant, Halogen-Free MSL1 Benefits Lower Conduction Losses Increased Power Density Increased Reliability results in Increased Power Density  Multi-Vendor patibility Easier Manufacturing Environmentally Friendlier Increased Reliability Base part number   IRFH7885Pb F Package Type   PQFN 5mm x 6 mm Standard Pack Form Quantity Tape and Reel Orderable Part Number IRFH7885TRPb F Absolute Maximum Ratings Parameter VGS ID @ TA = 25°C ID @ TC(Bottom) = 25°C ID @ TC(Bottom) = 100°C IDM PD @TA = 25°C PD @TC(Bottom) = 25°C Gate-to-Source Voltage Continuous Drain Current, VGS @ 10V Continuous Drain Current, VGS @ 10V Continuous Drain Current, VGS @ 10V Pulsed Drain Current  Power Dissipation Power Dissipation Linear Derating Factor TJ TSTG Operating Junction and Storage Temperature Range   Max. ± 20 22 146 93 250 3.6 156 0.03 -55 to + 150   Units V W/°C °C Notes  through  are on page 8 1 .irf. © 2015 International Rectifier Submit Datasheet Feedback May 12 ,2015   IRFH7885Pb F Static @ TJ = 25°C (unless otherwise specified) Parameter BVDSS Drain-to-Source Breakdown Voltage BVDSS/TJ Breakdown Voltage Temp. Coefficient RDS(on) Static Drain-to-Source On-Resistance VGS(th) Gate Threshold Voltage VGS(th) Gate Threshold Voltage Coefficient IDSS Drain-to-Source Leakage Current IGSS Gate-to-Source Forward Leakage Gate-to-Source Reverse Leakage gfs Forward Transconductance...