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International Rectifier Electronic Components Datasheet

IRFH7885PBF Datasheet

Power MOSFET

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VDSS
RDS(on) max
(@ VGS = 10V)
Qg (typical)
Rg (typical)
ID
(@TC (Bottom) = 25°C)
80
3.9
36
1.2
146
V
m
nC

A
 
Applications
 Primary Switch for High Frequency 48V/60V Telecom DC-DC Power Supplies
 Secondary Side Synchronous Rectifier
 BLDC Motor Drive
FastIRFET™
IRFH7885PbF
HEXFET® Power MOSFET
  PQFN 5X6 mm
Features
Low RDS(ON) (< 3.9m)
Low Thermal Resistance to PCB (<0.8°C/W)
100% Rg Tested
Low Profile (<1.05 mm)
Industry-Standard Pinout
Compatible with Existing Surface Mount Techniques
RoHS Compliant, Halogen-Free
MSL1
Benefits
Lower Conduction Losses
Increased Power Density
Increased Reliability
results in Increased Power Density
 Multi-Vendor Compatibility
Easier Manufacturing
Environmentally Friendlier
Increased Reliability
Base part number  
IRFH7885PbF
Package Type  
PQFN 5mm x 6 mm
Standard Pack
Form
Quantity
Tape and Reel
4000
Orderable Part Number
IRFH7885TRPbF
Absolute Maximum Ratings
Parameter
VGS
ID @ TA = 25°C
ID @ TC(Bottom) = 25°C
ID @ TC(Bottom) = 100°C
IDM
PD @TA = 25°C
PD @TC(Bottom) = 25°C
Gate-to-Source Voltage
Continuous Drain Current, VGS @ 10V
Continuous Drain Current, VGS @ 10V
Continuous Drain Current, VGS @ 10V
Pulsed Drain Current
Power Dissipation
Power Dissipation
Linear Derating Factor
TJ
TSTG
Operating Junction and
Storage Temperature Range
 
Max.
± 20
22
146
93
250
3.6
156
0.03
-55 to + 150
 
Units
V
A
W
W/°C
°C
Notes through are on page 8
1 www.irf.com © 2015 International Rectifier
Submit Datasheet Feedback
May 12 ,2015


International Rectifier Electronic Components Datasheet

IRFH7885PBF Datasheet

Power MOSFET

No Preview Available !

  IRFH7885PbF
Static @ TJ = 25°C (unless otherwise specified)
Parameter
BVDSS
Drain-to-Source Breakdown Voltage
BVDSS/TJ Breakdown Voltage Temp. Coefficient
RDS(on)
Static Drain-to-Source On-Resistance
VGS(th)
Gate Threshold Voltage
VGS(th)
Gate Threshold Voltage Coefficient
IDSS Drain-to-Source Leakage Current
IGSS Gate-to-Source Forward Leakage
Gate-to-Source Reverse Leakage
gfs Forward Transconductance
Qg
Qgs1
Qgs2
Qgd
Qgodr
Qsw
Qoss
RG
td(on)
tr
td(off)
tf
Ciss
Coss
Crss
Total Gate Charge
Pre-Vth Gate-to-Source Charge
Post-Vth Gate-to-Source Charge
Gate-to-Drain Charge
Gate Charge Overdrive
Switch Charge (Qgs2 + Qgd)
Output Charge
Gate Resistance
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Diode Characteristics
Parameter
IS Continuous Source Current
(Body Diode)
ISM Pulsed Source Current
(Body Diode)
VSD Diode Forward Voltage
trr Reverse Recovery Time
Qrr Reverse Recovery Charge
Avalanche Characteristics
Parameter
EAS Single Pulse Avalanche Energy
IAR Avalanche Current
Min.
80
–––
–––
2.0
–––
–––
–––
–––
111
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
Min.
–––
–––
–––
–––
–––
 
Typ.
–––
43
3.1
–––
-5.8
–––
–––
–––
–––
36
7.1
2.6
12
14.3
14.6
101
1.2
5.4
6.2
13
4.6
2311
1373
28
 
Typ.
–––
–––
0.8
45
58
 
Max.
–––
–––
3.9
3.6
–––
1.0
100
-100
–––
54
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
 
Max.
146
250
1.3
68
87
  
Units
Conditions
V VGS = 0V, ID = 250µA
mV/°C Reference to 25°C, ID = 1mA
mVGS = 10V, ID = 50A
V
mV/°C
VDS = VGS, ID = 150µA
µA VDS = 64V, VGS = 0V
nA
VGS = 20V
VGS = -20V
S VDS = 25V, ID = 50A
 
nC
 
VDS = 40V
VGS = 10V
ID = 50A
 
 
nC VDS = 40V, VGS = 0V
 
ns
 
 
pF
 
VDD = 40V, VGS = 10V
ID = 50A
RG = 1.0
VGS = 0V
VDS = 40V
ƒ = 1.0MHz
  
Units
Conditions
MOSFET symbol
A
showing the
integral reverse
G
D
p-n junction diode.
S
V TJ = 25°C, IS= 50A, VGS=0V
ns TJ = 25°C, IF = 50A, VDD = 40V
nC di/dt = 100A/µs
 
Typ.
–––
–––
 
Max.
202
50
 
Units
mJ
A
Thermal Resistance
RJC (Bottom)
RJC (Top)
RJA
RJA (<10s)
Parameter
Junction-to-Case
Junction-to-Case
Junction-to-Ambient
Junction-to-Ambient
 
Typ.
–––
–––
–––
–––
 
Max.
0.8
19
35
23
 
Units
°C/W
2 www.irf.com © 2015 International Rectifier
Submit Datasheet Feedback
May 12 ,2015


Part Number IRFH7885PBF
Description Power MOSFET
Maker International Rectifier
Total Page 8 Pages
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