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International Rectifier Electronic Components Datasheet

IRFH7923PBF Datasheet

Power MOSFET

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PD - 96139
IRFH7923PbF
Applications
l High Frequency Point-of-Load Synchronous Buck
Converter for Applications in Neworking &
Computing Systems
l Optimized for Control FET Applications
VDSS
30V
HEXFET® Power MOSFET
RDS(on) max
Qg
:8.7m @VGS = 10V 8.7nC
Benefits
l Very low RDS(ON) at 4.5V VGS
l Low Gate Charge
l Fully Characterized Avalanche Voltage and
Current
l 100% Tested for RG
l Lead-Free (Qualified up to 260°C Reflow)
l RoHS compliant (Halogen Free)
l Low Thermal Resistance
l Large Source Lead for more reliable Soldering
D
D
D
D
PQFN
S
S
S
G
Absolute Maximum Ratings
Parameter
VDS Drain-to-Source Voltage
VGS
ID @ TA = 25°C
ID @ TA = 70°C
ID @ TC = 25°C
IDM
PD @TA = 25°C
PD @TA = 70°C
TJ
Gate-to-Source Voltage
Continuous Drain Current, VGS @ 10V
Continuous Drain Current, VGS @ 10V
cContinuous Drain Current, VGS @ 10V
Pulsed Drain Current
gPower Dissipation
gPower Dissipation
gLinear Derating Factor
Operating Junction and
TSTG
Storage Temperature Range
Thermal Resistance
Parameter
fRθJC
gRθJA
Junction-to-Case
Junction-to-Ambient
Notes  through … are on page 9
www.irf.com
Max.
30
± 20
15
12
33
120
3.0
1.9
0.02
-55 to + 150
Units
V
A
W
W/°C
°C
Typ.
–––
–––
Max.
8.3
42
Units
°C/W
1
3/3/08


International Rectifier Electronic Components Datasheet

IRFH7923PBF Datasheet

Power MOSFET

No Preview Available !

www.DataSheet4U.com
IRFH7923PbF
Static @ TJ = 25°C (unless otherwise specified)
BVDSS
∆ΒVDSS/TJ
RDS(on)
VGS(th)
VGS(th)
IDSS
IGSS
gfs
Qg
Qgs1
Qgs2
Qgd
Qgodr
Qsw
Qoss
RG
td(on)
tr
td(off)
tf
Ciss
Coss
Crss
Parameter
Drain-to-Source Breakdown Voltage
Breakdown Voltage Temp. Coefficient
Static Drain-to-Source On-Resistance
Gate Threshold Voltage
Gate Threshold Voltage Coefficient
Drain-to-Source Leakage Current
Gate-to-Source Forward Leakage
Gate-to-Source Reverse Leakage
Forward Transconductance
Total Gate Charge
Pre-Vth Gate-to-Source Charge
Post-Vth Gate-to-Source Charge
Gate-to-Drain Charge
Gate Charge Overdrive
Switch Charge (Qgs2 + Qgd)
Output Charge
Gate Resistance
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Min.
30
–––
–––
–––
1.35
–––
–––
–––
–––
–––
29
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
Typ.
–––
0.024
6.8
9.3
1.8
-5.8
–––
–––
–––
–––
–––
8.7
1.8
1.1
2.7
3.1
3.8
4.9
2.0
7.1
8.7
8.6
4.9
1095
235
110
Max. Units
Conditions
–––
–––
8.7
11.9
2.35
–––
V VGS = 0V, ID = 250µA
V/°C Reference to 25°C, ID = 1mA
eem
VGS = 10V, ID = 15A
VGS = 4.5V, ID = 12A
V
mV/°C
VDS
=
VGS,
ID
=
25µA
1.0
150
100
-100
–––
13
µA
VDS = 24V, VGS = 0V
VDS = 24V, VGS = 0V, TJ = 125°C
nA
VGS = 20V
VGS = -20V
S VDS = 15V, ID = 12A
––– VDS = 15V
–––
–––
nC
VGS = 4.5V
ID = 12A
––– See Fig.17 & 18
–––
––– nC VDS = 16V, VGS = 0V
3.0
––– VDD = 15V, VGS = 4.5V
–––
–––
ns
ID = 12A
RG=1.8
––– See Fig.15
––– VGS = 0V
––– pF VDS = 15V
––– ƒ = 1.0MHz
Avalanche Characteristics
Parameter
dEAS Single Pulse Avalanche Energy
™IAR Avalanche Current
Typ.
–––
–––
Max.
26
12
Units
mJ
A
Diode Characteristics
Parameter
Min. Typ. Max. Units
Conditions
IS Continuous Source Current
(Body Diode)
ISM Pulsed Source Current
Ù(Body Diode)
VSD Diode Forward Voltage
––– ––– 3.7
––– ––– 120
––– ––– 1.0
MOSFET symbol
D
A
showing the
integral reverse
G
p-n junction diode.
S
eV TJ = 25°C, IS = 12A, VGS = 0V
trr Reverse Recovery Time
Qrr Reverse Recovery Charge
––– 12 18 ns TJ = 25°C, IF = 12A, VDD = 15V
––– 11 17 nC di/dt = 300A/µs
ton Forward Turn-On Time
Intrinsic turn-on time is negligible (turn-on is dominated by LS+LD)
2 www.irf.com


Part Number IRFH7923PBF
Description Power MOSFET
Maker International Rectifier
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International Rectifier





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