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International Rectifier Electronic Components Datasheet

IRFH8202TRPBF Datasheet

Power MOSFET

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VDS
RDS(on) max
(@VGS = 10V)
Qg (typical)
RG (typical)
ID
(@TC(Bottom) = 25°C)
25
1.05
52
1.3
h100
V
mΩ
nC
Ω
A
Applications
OR-ing MOSFET for 12V (typical) Bus in-Rush Current
Battery Operated DC Motor Inverter MOSFET
Features and Benefits
Features
Low RDSon (<1.05 mΩ)
Low Thermal Resistance to PCB (<0.8°C/W)
Low Profile (<0.9 mm)
Industry-Standard Pinout
Compatible with Existing Surface Mount Techniques
RoHS Compliant Containing no Lead, no Bromide and no Halogen
MSL1, Industrial Qualification
StrongIRFET™
IRFH8202TRPbF
HEXFET® Power MOSFET
PQFN 5X6 mm
results in
Benefits
Lower Conduction Losses
Enable better thermal dissipation
Increased Power Density
Multi-Vendor Compatibility
Easier Manufacturing
Environmentally Friendlier
Increased Reliability
Base part number
IRFH8202PbF
Package Type
PQFN 5mm x 6mm
Standard Pack
Form
Quantity
Tape and Reel
4000
Orderable part number
IRFH8202TRPbF
Absolute Maximum Ratings
VGS
ID @ TA = 25°C
ID @ TA = 70°C
ID @ TC(Bottom) = 25°C
ID @ TC(Bottom) = 100°C
IDM
PD @TA = 25°C
PD @TC(Bottom) = 25°C
TJ
TSTG
Parameter
Gate-to-Source Voltage
Continuous Drain Current, VGS @ 10V
Continuous Drain Current, VGS @ 10V
Continuous Drain Current, VGS @ 10V
cContinuous Drain Current, VGS @ 10V
Pulsed Drain Current
gPower Dissipation
gPower Dissipation
gLinear Derating Factor
Operating Junction and
Storage Temperature Range
Max.
± 20
47
30
h100
h100
400
3.6
160
0.029
-55 to + 150
Units
V
A
W
W/°C
°C
Notes  through † are on page 9
1 www.irf.com © 2015 International Rectifier
Submit Datasheet Feedback
May 19, 2015


International Rectifier Electronic Components Datasheet

IRFH8202TRPBF Datasheet

Power MOSFET

No Preview Available !

IRFH8202TRPbF
Static @ TJ = 25°C (unless otherwise specified)
Parameter
BVDSS
ΔΒVDSS/ΔTJ
RDS(on)
Drain-to-Source Breakdown Voltage
Breakdown Voltage Temp. Coefficient
Static Drain-to-Source On-Resistance
VGS(th)
ΔVGS(th)
IDSS
Gate Threshold Voltage
Gate Threshold Voltage Coefficient
Drain-to-Source Leakage Current
IGSS
gfs
Qg
Qg
Qgs1
Qgs2
Qgd
Qgodr
Qsw
Qoss
RG
td(on)
tr
td(off)
tf
Ciss
Coss
Crss
Gate-to-Source Forward Leakage
Gate-to-Source Reverse Leakage
Forward Transconductance
Total Gate Charge
Total Gate Charge
Pre-Vth Gate-to-Source Charge
Post-Vth Gate-to-Source Charge
Gate-to-Drain Charge
Gate Charge Overdrive
Switch Charge (Qgs2 + Qgd)
Output Charge
Gate Resistance
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Avalanche Characteristics
Parameter
dEAS Single Pulse Avalanche Energy
cIAR Avalanche Current
Diode Characteristics
Parameter
IS Continuous Source Current
(Body Diode)
ISM Pulsed Source Current
Ù(Body Diode)
VSD Diode Forward Voltage
trr Reverse Recovery Time
Qrr Reverse Recovery Charge
Min.
25
–––
–––
–––
1.35
–––
–––
–––
–––
–––
181
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
Typ.
–––
0.02
0.90
1.40
1.80
-6.3
–––
–––
–––
–––
–––
110
52
13
7.8
17
15
25
36
1.3
28
46
30
19
7174
1758
828
Max.
–––
–––
1.05
1.85
2.35
–––
5.0
150
100
-100
–––
–––
78
–––
–––
–––
–––
–––
–––
2.6
–––
–––
–––
–––
–––
–––
–––
Units
V
V/°C
mΩ
V
mV/°C
μA
nA
S
nC
Conditions
VGS = 0V, ID = 250μA
eReference to 25°C, ID = 1mA
VGS = 10V, ID = 50A
eVGS = 4.5V, ID = 50A
VDS = VGS, ID = 150μA
VDS = 20V, VGS = 0V
VDS = 20V, VGS = 0V, TJ = 125°C
VGS = 20V
VGS = -20V
VDS = 13V, ID = 50A
VGS = 10V, VDS = 13V, ID = 50A
VDS = 13V
nC
VGS = 4.5V
ID = 50A
nC VDS = 16V, VGS = 0V
Ω
VDD = 13V, VGS = 4.5V
ns ID = 50A
RG=1.8Ω
VGS = 0V
pF VDS = 13V
ƒ = 1.0MHz
Typ.
–––
–––
Max.
468
50
Units
mJ
A
Min.
–––
–––
–––
–––
–––
Typ.
–––
–––
–––
37
68
Max.
h100
400
1.0
56
102
Units
A
V
ns
nC
Conditions
MOSFET symbol
showing the
integral reverse
G
p-n junction diode.
eTJ = 25°C, IS = 50A, VGS = 0V
TJ = 25°C, IF = 50A, VDD = 13V
di/dt = 200A/μs
D
S
Thermal Resistance
RθJC(Bottom)
RθJC (Top)
RθJA
RθJA (<10s)
fJunction-to-Case
fJunction-to-Case
gJunction-to-Ambient
gJunction-to-Ambient
Parameter
Typ.
0.5
–––
–––
–––
Max.
0.8
15
35
21
Units
°C/W
2 www.irf.com © 2015 International Rectifier
Submit Datasheet Feedback
May 19, 2015


Part Number IRFH8202TRPBF
Description Power MOSFET
Maker International Rectifier
Total Page 9 Pages
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International Rectifier





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