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International Rectifier Electronic Components Datasheet

IRFH8311PBF Datasheet

HEXFET Power MOSFET

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IRFH8311PbF
VDS
Vgs max
RDS(on) max
(@VGS = 10V)
(@VGS = 4.5V)
Qg typ.
ID
(@Tc(Bottom) = 25°C)
30
± 20
2.1
3.2
30
80i
V
V
m
nC
A
Applications
Synchronous MOSFET for high frequency buck converters
Features and Benefits
Features
Low Thermal Resistance to PCB (< 1.3°C/W)
Low Profile (<1.2mm)
Industry-Standard Pinout
Compatible with Existing Surface Mount Techniques
RoHS Compliant Containing no Lead, no Bromide and no Halogen
MSL1, Industrial Qualification
HEXFET® Power MOSFET
PQFN 5X6 mm
results in
Benefits
Enable better thermal dissipation
Increased Power Density
Multi-Vendor Compatibility
Easier Manufacturing
Environmentally Friendlier
Increased Reliability
Base part number Package Type
Standard Pack
Form
Quantity
Orderable part number
Note
IRFH8311TRPBF PQFN 5mm x 6mm Tape and Reel 4000
IRFH8311TRPBF
IRFH8311TR2PBF PQFN 5mm x 6mm Tape and Reel 400
IRFH8311TR2PBF EOL notice #259
Absolute Maximum Ratings
Parameter
VDS
VGS
ID @ TA = 25°C
ID @ TA = 70°C
ID @ TC(Bottom) = 25°C
ID @ TC(Bottom) = 100°C
ID @ TC = 25°C
IDM
PD @TA = 25°C
PD @TC(Bottom) = 25°C
Drain-to-Source Voltage
Gate-to-Source Voltage
Continuous Drain Current, VGS @ 10V
Continuous Drain Current, VGS @ 10V
Continuous Drain Current, VGS @ 10V
Continuous Drain Current, VGS @ 10V
Continuous Drain Current, VGS @ 10V (Package Limited)
cPulsed Drain Current
gPower Dissipation
gPower Dissipation
gLinear Derating Factor
TJ
TSTG
Operating Junction and
Storage Temperature Range
Notes  through ‡ are on page 9
Max.
30
± 20
32
26
169hi
107hi
80i
400
3.6
96
0.029
-55 to + 150
1 www.irf.com © 2014 International Rectifier
Submit Datasheet Feedback
Units
V
A
W
W/°C
°C
January 7, 2014


International Rectifier Electronic Components Datasheet

IRFH8311PBF Datasheet

HEXFET Power MOSFET

No Preview Available !

IRFH8311PbF
Static @ TJ = 25°C (unless otherwise specified)
Parameter
Min.
BVDSS
∆ ΒVDSS/TJ
RDS(on)
Drain-to-Source Breakdown Voltage
Breakdown Voltage Temp. Coefficient
Static Drain-to-Source On-Resistance
30
–––
–––
–––
V GS(t h)
VGS(th)
IDSS
Gate Threshold Voltage
Gate Threshold Voltage Coefficient
Drain-to-Source Leakage Current
1.35
–––
–––
–––
IGSS
Gate-to-Source Forward Leakage
–––
Gate-to-Source Reverse Leakage
–––
gfs Forward Transconductance
83
Qg
Qg
Qgs1
Qgs2
Qgd
Qgodr
Qsw
Qoss
RG
Total Gate Charge
Total Gate Charge
Pre-Vth Gate-to-Source Charge
Post-Vth Gate-to-Source Charge
Gate-to-Drain Charge
Gate Charge Overdrive
Switch Charge (Qgs2 + Qgd)
Output Charge
Gate Resistance
–––
–––
–––
–––
–––
–––
–––
–––
–––
td(on)
tr
td(off )
tf
Ciss
Coss
Crss
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
–––
–––
–––
–––
–––
–––
–––
Avalanche Characteristics
Typ.
–––
0.021
1.70
2.60
1.8
-6.6
–––
–––
–––
–––
–––
66
30
9.7
3.9
8.6
7.8
12.5
21
0.6
21
26
21
12
4960
1065
455
Max.
–––
–––
2.10
3.20
2.35
–––
1
150
100
-100
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
Units
Conditions
V VGS = 0V, ID = 250µA
V/°C
m
V
Reference to 25°C, ID = 1.0mA
eVGS = 10V, ID = 20A
eVGS = 4.5V, ID = 16A
VDS = VGS, ID = 100µA
mV/°C
µA VDS = 24V, VGS = 0V
VDS = 24V, VGS = 0V, TJ = 125°C
nA VGS = 20V
VGS = -20V
S VDS = 10V, ID = 20A
nC VGS = 10V, VDS = 15V, ID = 20A
VDS = 15V
nC VGS = 4.5V
ID = 20A
nC VDS = 16V, VGS = 0V
VDD = 15V, VGS = 4.5V
ns ID = 20A
RG=1.8
VGS = 0V
pF VDS = 10V
ƒ = 1.0MHz
Parameter
dEAS Single Pulse Avalanche Energy
™IAR Avalanche Current
Diode Characteristics
Typ.
–––
–––
Max.
326
20
Units
mJ
A
Parameter
Min. Typ. Max. Units
Conditions
IS Continuous Source Current
(Body Diode)
ISM Pulsed Source Current
Ù(Body Diode)
VSD Diode Forward Voltage
trr Reverse Recovery Time
Qrr Reverse Recovery Charge
ton Forward Turn-On Time
i––– ––– 80
––– ––– 400
––– –––
––– 22
––– 47
1.0
33
71
MOSFET symbol
D
A showing the
integral reverse
G
S
p-n junction diode.
eV TJ = 25°C, IS = 20A, VGS = 0V
ns TJ = 25°C, IF = 20A, VDD = 15V
nC di/dt = 390 A/µs
Time is dominated by parasitic Inductance
Thermal Resistance
RθJC (Bottom)
RθJC (Top)
RθJA
RθJA (<10s)
fJunction-to-Case
fJunction-to-Case
gJunction-to-Ambient
gJunction-to-Ambient
Parameter
Typ.
–––
–––
–––
–––
Max.
1.3
30
35
0.99
Units
°C/W
2 www.irf.com © 2014 International Rectifier
Submit Datasheet Feedback
January 7, 2014


Part Number IRFH8311PBF
Description HEXFET Power MOSFET
Maker International Rectifier
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IRFH8311PBF Datasheet PDF






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International Rectifier





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