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IRFH8307TRPBF - Power MOSFET

General Description

Dimension design to accommodate the component width Dimension design to accommodate the component lenght Dimension design to accommodate the component thickness Overall width of the carrier tape Pitch between successive cavity centers QUADRANT ASSIGNMENTS FOR P

Key Features

  • Low RDSon (.

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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VDSS RDS(on) max (@ VGS = 10V) Qg (typical) Rg (typical) 30 V 1.3 m 50 nC 1.3    ID (@TC (Bottom) = 25°C) 100 A Applications OR-ing MOSFET for 12V (typical) Bus in-Rush Current Battery Operated DC Motor Inverters StrongIRFET™ IRFH8307TRPbF HEXFET® Power MOSFET   PQFN 5X6 mm Features Low RDSon (<1.3m) Low Thermal Resistance to PCB (<0.8°C/W) Low Profile (<0.