IRFH8307TRPbF
IRFH8307TRPbF is Power MOSFET manufactured by Infineon.
Features
Low RDSon (<1.3m) Low Thermal Resistance to PCB (<0.8°C/W) Low Profile (<0.9 mm) Industry-Standard Pinout patible with Existing Surface Mount Techniques Ro HS pliant, Halogen-Free MSL1, Industrial Qualification
Benefits Lower Conduction Losses Enable better thermal dissipation results in Increased Power Density Multi-Vendor patibility Easier Manufacturing Environmentally Friendlier Increased Reliability
Base part number
Package Type
IRFH8307Pb F
PQFN 5mm x 6 mm
Standard Pack
Form
Quantity
Tape and Reel
Orderable Part Number IRFH8307TRPb F
Absolute Maximum Ratings
VGS ID @ TA = 25°C ID @ TA = 70°C ID @ TC (Bottom) = 25°C ID @ TC (Bottom) = 100°C IDM PD @TA = 25°C PD @TC (Bottom) = 25°C
TJ TSTG
Parameter Gate-to-Source Voltage Continuous Drain Current, VGS @ 10V Continuous Drain Current, VGS @ 10V Continuous Drain Current, VGS @ 10V Continuous Drain Current, VGS @ 10V Pulsed Drain Current Power Dissipation Power Dissipation Linear Derating Factor Operating Junction and Storage Temperature Range
Max. ± 20 42 33 100 100 400 3.6 156 0.029 -55 to + 150
Units V
A
W W/°C
°C
Notes through are on page 9 1
2020-02-27
IRFH8307TRPb F
Static @ TJ = 25°C (unless otherwise specified)
Parameter
BVDSS
Drain-to-Source Breakdown Voltage
BVDSS/TJ Breakdown Voltage Temp. Coefficient
RDS(on)
Static Drain-to-Source On-Resistance
VGS(th)
VGS(th) IDSS
Gate Threshold Voltage Gate Threshold Voltage Coefficient
Drain-to-Source Leakage Current
IGSS gfs...