• Part: IRFH8307TRPbF
  • Description: Power MOSFET
  • Category: MOSFET
  • Manufacturer: Infineon
  • Size: 539.30 KB
Download IRFH8307TRPbF Datasheet PDF
Infineon
IRFH8307TRPbF
IRFH8307TRPbF is Power MOSFET manufactured by Infineon.
Features Low RDSon (<1.3m) Low Thermal Resistance to PCB (<0.8°C/W) Low Profile (<0.9 mm) Industry-Standard Pinout patible with Existing Surface Mount Techniques Ro HS pliant, Halogen-Free MSL1, Industrial Qualification Benefits Lower Conduction Losses Enable better thermal dissipation results in Increased Power Density  Multi-Vendor patibility Easier Manufacturing Environmentally Friendlier Increased Reliability Base part number Package Type    IRFH8307Pb F PQFN 5mm x 6 mm Standard Pack Form Quantity Tape and Reel Orderable Part Number IRFH8307TRPb F Absolute Maximum Ratings VGS ID @ TA = 25°C ID @ TA = 70°C ID @ TC (Bottom) = 25°C ID @ TC (Bottom) = 100°C IDM PD @TA = 25°C PD @TC (Bottom) = 25°C TJ TSTG Parameter Gate-to-Source Voltage Continuous Drain Current, VGS @ 10V Continuous Drain Current, VGS @ 10V Continuous Drain Current, VGS @ 10V Continuous Drain Current, VGS @ 10V Pulsed Drain Current  Power Dissipation  Power Dissipation  Linear Derating Factor  Operating Junction and Storage Temperature Range   Max. ± 20 42 33 100 100 400 3.6 156 0.029 -55 to + 150   Units V A  W W/°C °C Notes  through  are on page 9 1 2020-02-27   IRFH8307TRPb F Static @ TJ = 25°C (unless otherwise specified) Parameter BVDSS Drain-to-Source Breakdown Voltage BVDSS/TJ Breakdown Voltage Temp. Coefficient RDS(on) Static Drain-to-Source On-Resistance VGS(th) VGS(th) IDSS Gate Threshold Voltage Gate Threshold Voltage Coefficient Drain-to-Source Leakage Current IGSS gfs...