IRFHE4250DPBF
Features
Control and synchronous MOSFETs in one package Low thermal resistance path to the PCB Low thermal resistance path to the top Low charge control MOSFET (13n C typical)
Low RDSON synchronous MOSFET (<1.35m) Intrinsic schottky diode with low forward voltage on Q2 Ro HS pliant, halogen-free MSL2, industrial qualification
DUAL PQFN 6X6 mm
Benefits Increased power density Increased power density Increased power density results in Lower switching losses Lower conduction losses Lower switching losses Environmentally friendlier Increased reliability
Base part number
IRFHE4250DPb F
Package Type
Dual PQFN 6mm x 6mm
Standard Pack
Form Tape and Reel
Quantity 4000
Orderable Part Number IRFHE4250DTRPb F
Absolute Maximum Ratings
VGS ID @ TC = 25°C ID @ TC = 70°C ID @ TC = 25°C
IDM PD @TC = 25°C PD @TC = 70°C
Parameter Gate-to-Source Voltage Continuous Drain Current, VGS @ 10V Continuous Drain Current, VGS @ 10V Continuous Drain Current (Source Bonding Technology Limited) Pulsed...
