IRFHE4250DPBF Datasheet | International Rectifier

Features Control and synchronous MOSFETs in one package Low thermal resistance path to the PCB Low thermal resistance path to the top Low charge control MOSFET (13n C typical) Low RDSON synchronous MOSFET (<1.35m) Intrinsic schottky diode with low forward voltage on Q2 Ro HS pliant, halogen-free MSL2, industrial qualification DUAL PQFN 6X6 mm Benefits Increased power density Increased power density Increased power density results in Lower switching losses  Lower conduction losses Lower switching losses Environmentally friendlier Increased reliability Base part number   IRFHE4250DPb F Package Type   Dual PQFN 6mm x 6mm Standard Pack Form Tape and Reel Quantity 4000 Orderable Part Number IRFHE4250DTRPb F Absolute Maximum Ratings VGS ID @ TC = 25°C ID @ TC = 70°C ID @ TC = 25°C IDM PD @TC = 25°C PD @TC = 70°C Parameter Gate-to-Source Voltage Continuous Drain Current, VGS @ 10V Continuous Drain Current, VGS @ 10V Continuous Drain Current (Source Bonding Technology Limited) Pulsed Drain Current Power Dissipation Power Dissipation Linear Derating Factor TJ TSTG Operating Junction and Storage Temperature Range Thermal Resistance RJC (Bottom) RJC (Top) RJA RJA (<10s) Parameter Junction-to-Case - Junction-to-Case - Junction-to-Ambient  Junction-to-Ambient  Notes  through  are on page 12    Q1 Max. Q2 Max. ± 16   86 303 69 243 Units 60 180 156 100 1.3 60 525 156 100 1.3 -55 to +...