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International Rectifier Electronic Components Datasheet

IRFHE4250DPBF Datasheet

Power MOSFET

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VDSS
RDS(on) max
(@VGS = 4.5V)
Qg (typical)
ID
(@TC = 25°C)
Q1
25
4.10
13
60
Q2
25
1.35
35
60
V
m
nC
A
 
Applications
Control and Synchronous MOSFETs for synchronous buck
converters
FASTIRFET™
IRFHE4250DPbF
HEXFET® Power MOSFET
 
 
Features
Control and synchronous MOSFETs in one package
Low thermal resistance path to the PCB
Low thermal resistance path to the top
Low charge control MOSFET (13nC typical)
Low RDSON synchronous MOSFET (<1.35m)
Intrinsic schottky diode with low forward voltage on Q2
RoHS compliant, halogen-free
MSL2, industrial qualification
DUAL PQFN 6X6 mm
Benefits
Increased power density
Increased power density
Increased power density
results in Lower switching losses
Lower conduction losses
Lower switching losses
Environmentally friendlier
Increased reliability
Base part number
 
IRFHE4250DPbF
Package Type
 
Dual PQFN 6mm x 6mm
Standard Pack
Form
Tape and Reel
Quantity
4000
Orderable Part Number
IRFHE4250DTRPbF
Absolute Maximum Ratings
VGS
ID @ TC = 25°C
ID @ TC = 70°C
ID @ TC = 25°C
IDM
PD @TC = 25°C
PD @TC = 70°C
Parameter
Gate-to-Source Voltage
Continuous Drain Current, VGS @ 10V
Continuous Drain Current, VGS @ 10V
Continuous Drain Current
(Source Bonding Technology Limited)
Pulsed Drain Current
Power Dissipation
Power Dissipation
Linear Derating Factor
TJ
TSTG
Operating Junction and
Storage Temperature Range
Thermal Resistance
RJC (Bottom)
RJC (Top)
RJA
RJA (<10s)
Parameter
Junction-to-Case
Junction-to-Case
Junction-to-Ambient
Junction-to-Ambient
Notes through are on page 12
  
Q1 Max. Q2 Max.
± 16  
86 303
69 243
Units
V
A
60
180
156
100
1.3
60
525
156
100
1.3
-55 to + 150
W
W/°C
°C
 
Q1 Max.
3.7
0.91
24
17
 
Q2 Max.
0.91
2.1
24
17
 
Units
°C/W
1 www.irf.com © 2013 International Rectifier
September 26, 2013


International Rectifier Electronic Components Datasheet

IRFHE4250DPBF Datasheet

Power MOSFET

No Preview Available !

  IRFHE4250DPbF
Static @ TJ = 25°C (unless otherwise specified)
Parameter
BVDSS
Drain-to-Source Breakdown Voltage
BVDSS/TJ Breakdown Voltage Temp. Coefficient
RDS(on)
Static Drain-to-Source On-Resistance
VGS(th)
Gate Threshold Voltage
VGS(th)/TJ Gate Threshold Voltage Coefficient
IDSS Drain-to-Source Leakage Current
IGSS Gate-to-Source Forward Leakage
Gate-to-Source Reverse Leakage
gfs Forward Transconductance
Qg Total Gate Charge
Qgs1 Pre-Vth Gate-to-Source Charge
Qgs2 Post-Vth Gate-to-Source Charge
Qgd Gate-to-Drain Charge
Qgodr
Qsw
Qoss
Gate Charge Overdrive
Switch Charge (Qgs2 + Qgd)
Output Charge
RG Gate Resistance
td(on) Turn-On Delay Time
tr Rise Time
td(off) Turn-Off Delay Time
tf Fall Time
Ciss Input Capacitance
Coss Output Capacitance
Crss Reverse Transfer Capacitance
  
  
 
Min. Typ. Max. Units
Conditions
Q1 25 ––– ––– V VGS = 0V, ID = 250µA
Q2 25 ––– –––
VGS = 0V, ID = 1.0mA
Q1 ––– 23 ––– mV/°C Reference to 25°C, ID = 1.0mA
Q2 ––– 21 –––
Reference to 25°C, ID = 10mA
Q1 ––– 2.20 2.75
VGS = 10V, ID = 27A
Q2 ––– 0.70 0.90 mVGS = 10V, ID = 27A
Q1 ––– 3.20 4.10
VGS = 4.5V, ID = 27A
Q2 ––– 1.00 1.35
VGS = 4.5V, ID = 27A
Q1 1.1 1.6 2.1 V Q1: VDS = VGS, ID = 35µA
Q2 1.1 1.6 2.1
Q2: VDS = VGS, ID = 100µA
Q1 ––– -5.8 ––– mV/°C Q1: VDS = VGS, ID = 35µA
Q2 ––– -7.8 –––
Q2: VDS = VGS, ID = 1.0mA
Q1 ––– ––– 1.0 µA VDS = 20V, VGS = 0V
Q2 ––– ––– 500
VDS = 20V, VGS = 0V
Q1/Q2 ––– ––– 100 nA VGS = 16V
Q1/Q2 ––– ––– -100
VGS = -16V
Q1 73 ––– ––– S VDS = 10V, ID = 14A
Q2 121 ––– –––
VDS = 10V, ID = 23A
Q1 ––– 13 20
Q2 ––– 35 53
Q1 ––– 3.6 –––
Q1
Q2 ––– 8.6 –––
VDS = 13V
Q1 ––– 1.3 –––
VGS = 4.5V, ID = 13A
Q2 ––– 3.8 ––– nC
Q1 ––– 5.2 –––
Q2
Q2 ––– 13 –––
Q1 ––– 2.9 –––
Q2 ––– 9.6 –––
VDS = 13V
VGS = 4.5V, ID = 23A
Q1 ––– 6.5 –––
Q2 ––– 16.8 –––
Q1 ––– 14 ––– nC VDS = 16V, VGS = 0V
Q2 ––– 41 –––
Q1 ––– 0.5 ––– 
Q2 ––– 0.4 –––
Q1 ––– 11 –––
Q1
Q2 ––– 17 –––
VDS = 13V VGS = 4.5V
Q1 ––– 33 –––
ID = 14A, Rg = 1.8
Q2 ––– 54 ––– ns
Q1 ––– 14 –––
Q2
Q2 ––– 24 –––
Q1 ––– 12 –––
Q2 ––– 16 –––
VDS = 13V VGS = 4.5V
ID = 23A, Rg = 1.8
Q1 ––– 1735 –––
Q2 ––– 4765 –––
VGS = 0V
Q1 ––– 493 ––– pF VDS = 13V
Q2 ––– 1577 –––
ƒ = 1.0MHz
Q1 ––– 137 –––
Q2 ––– 370 –––
2 www.irf.com © 2013 International Rectifier
September 26, 2013


Part Number IRFHE4250DPBF
Description Power MOSFET
Maker International Rectifier
Total Page 12 Pages
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