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IRFHE4250DPBF - Power MOSFET

IRFHE4250DPBF Description

VDSS RDS(on) max (@VGS = 4.5V) Qg (typical) ID (@TC = 25°C) Q1 25 4.10 13 60 Q2 25 1.35 35 60 V m nC A   Applications *Control and Syn.

IRFHE4250DPBF Features

* Control and synchronous MOSFETs in one package Low thermal resistance path to the PCB Low thermal resistance path to the top Low charge control MOSFET (13nC typical) Low RDSON synchronous MOSFET (

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