IRFHM4234TRPbF
Static @ TJ = 25°C (unless otherwise specified)
Parameter
BVDSS
Drain-to-Source Breakdown Voltage
BVDSS/TJ Breakdown Voltage Temp. Coefficient
RDS(on)
Static Drain-to-Source On-Resistance
VGS(th)
VGS(th)
IDSS
IGSS
Gate Threshold Voltage
Gate Threshold Voltage Coefficient
Drain-to-Source Leakage Current
Gate-to-Source Forward Leakage
Gate-to-Source Reverse Leakage
gfs Forward Transconductance
Qg Total Gate Charge
Qg Total Gate Charge
Qgs1 Pre-Vth Gate-to-Source Charge
Qgs2 Post-Vth Gate-to-Source Charge
Qgd Gate-to-Drain Charge
Qgodr
Gate Charge Overdrive
Qsw Switch Charge (Qgs2 + Qgd)
Qoss Output Charge
RG Gate Resistance
td(on) Turn-On Delay Time
tr Rise Time
td(off) Turn-Off Delay Time
tf Fall Time
Ciss Input Capacitance
Coss Output Capacitance
Crss Reverse Transfer Capacitance
Avalanche Characteristics
Parameter
EAS Single Pulse Avalanche Energy
IAR Avalanche Current
Diode Characteristics
Parameter
IS Continuous Source Current
(Body Diode)
ISM Pulsed Source Current
(Body Diode)
VSD Diode Forward Voltage
trr Reverse Recovery Time
Qrr Reverse Recovery Charge
Thermal Resistance
RJC (Bottom)
RJC (Top)
RJA
RJA (<10s)
Parameter
Junction-to-Case
Junction-to-Case
Junction-to-Ambient
Junction-to-Ambient
Min.
25
–––
–––
–––
1.1
–––
–––
–––
–––
60
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
Min.
–––
–––
–––
–––
–––
Typ.
–––
21
3.5
5.6
1.6
-5.5
–––
–––
–––
–––
17
8.2
1.6
1.6
3.1
1.9
4.7
7.7
1.8
7.8
30
8.0
5.3
1011
286
83
Typ.
–––
–––
–––
10
11
Max.
–––
–––
4.4
7.1
2.1
–––
1.0
100
-100
–––
–––
12.3
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
Typ.
–––
–––
Max.
60
270
1.0
15
17
Units
Conditions
V VGS = 0V, ID = 250µA
mV/°C Reference to 25°C, ID = 1mA
m VGS = 10V, ID = 30A
VGS = 4.5V, ID = 30A
V VDS = VGS, ID = 25µA
mV/°C
µA VDS = 20V, VGS = 0V
nA VGS = 20V
VGS = -20V
S VDS = 5.0V, ID = 30A
nC VGS = 10V, VDS = 13V, ID = 30A
nC
VDS = 13V
VGS = 4.5V
ID = 30A
nC VDS = 16V, VGS = 0V
ns
pF
VDD = 13V, VGS = 4.5V
ID = 30A
RG=1.8
VGS = 0V
VDS = 13V
ƒ = 1.0MHz
Max.
39
30
Units
Conditions
A MOSFET symbol
showing the
integral reverse
G
p-n junction diode.
D
S
V TJ = 25°C, IS = 30A, VGS = 0V
ns TJ = 25°C, IF = 30A, VDD = 13V
nC di/dt = 200A/µs
Typ.
–––
–––
–––
–––
Max.
4.4
40
45
31
Units
°C/W
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August 01, 2014