International Rectifier Electronic Components Datasheet

IRFHM4234TRPBF Datasheet

Power MOSFET

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VDSS

RDS(on) max

(@ VGS = 10V)

(@ VGS = 4.5V)

Qg (typical)

(@TC (Bottom) = 25°C)

4.4

7.1

8.2

60

m

Applications

Control MOSFET for synchronous buck converter

Top View

FastIRFET™

IRFHM4234TRPbF

HEXFET® Power MOSFET

PQFN 3.3 x 3.3 mm

Features

Low Charge (typical 8.2 nC)

Low RDSon (<4.4 m)

Low Thermal Resistance to PCB (<4.4°C/W)

Low Profile (<0.9 mm)

Industry-Standard Pinout

Compatible with Existing Surface Mount Techniques

RoHS Compliant, Halogen-Free

MSL1, Industrial Qualification

Benefits

Low Switching Losses

Lower Conduction Losses

Enable better Thermal Dissipation

results in Increased Power Density

 Multi-Vendor Compatibility

Easier Manufacturing

Environmentally Friendlier

Increased Reliability

Base part number

IRFHM4234PbF

Package Type

PQFN 3.3mm x 3.3mm

Standard Pack

Form

Quantity

Tape and Reel

4000

Orderable Part Number

IRFHM4234TRPbF

Absolute Maximum Ratings

VGS

ID @ TA = 25°C

ID @ TC(Bottom) = 25°C

ID @ TC(Bottom) = 100°C

ID @ TC = 25°C

IDM

PD @TA = 25°C

PD @TC(Bottom) = 25°C

TSTG

Parameter

Gate-to-Source Voltage

Continuous Drain Current, VGS @ 10V

(Source Bonding Technology Limited)

Pulsed Drain Current 

Power Dissipation 

Power Dissipation

Linear Derating Factor

Operating Junction and

Storage Temperature Range

Max.

± 20

63

44

60

270

2.8

0.022

-55 to + 150

Units

W/°C

°C

Notes  through  are on page 9

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International Rectifier Electronic Components Datasheet

IRFHM4234TRPBF Datasheet

Power MOSFET

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IRFHM4234TRPbF

Static @ TJ = 25°C (unless otherwise specified)

Parameter

BVDSS

Drain-to-Source Breakdown Voltage

BVDSS/TJ Breakdown Voltage Temp. Coefficient

RDS(on)

Static Drain-to-Source On-Resistance

VGS(th)

VGS(th)

IDSS

IGSS

Gate Threshold Voltage

Gate Threshold Voltage Coefficient

Drain-to-Source Leakage Current

Gate-to-Source Forward Leakage

Gate-to-Source Reverse Leakage

gfs Forward Transconductance

Qg Total Gate Charge

Qgs1 Pre-Vth Gate-to-Source Charge

Qgs2 Post-Vth Gate-to-Source Charge

Qgd Gate-to-Drain Charge

Qgodr

Gate Charge Overdrive

Qsw Switch Charge (Qgs2 + Qgd)

Qoss Output Charge

RG Gate Resistance

td(on) Turn-On Delay Time

tr Rise Time

td(off) Turn-Off Delay Time

tf Fall Time

Ciss Input Capacitance

Coss Output Capacitance

Crss Reverse Transfer Capacitance

Avalanche Characteristics

Parameter

EAS Single Pulse Avalanche Energy 

IAR Avalanche Current 

Diode Characteristics

Parameter

IS Continuous Source Current

(Body Diode)

ISM Pulsed Source Current

(Body Diode) 

VSD Diode Forward Voltage

trr Reverse Recovery Time

Qrr Reverse Recovery Charge

Thermal Resistance

RJC (Bottom)

RJC (Top)

RJA

RJA (<10s)

Parameter

Junction-to-Case 

Junction-to-Ambient 

Min.

–––

1.1

–––

Min.

–––

Typ.

–––

3.5

5.6

1.6

-5.5

–––

8.2

1.6

3.1

1.9

4.7

7.7

1.8

7.8

8.0

5.3

1011

286

Typ.

–––

Max.

–––

4.4

7.1

2.1

–––

1.0

100

-100

–––

12.3

–––

Typ.

–––

Max.

60

270

1.0

Units

Conditions

V VGS = 0V, ID = 250µA

mV/°C Reference to 25°C, ID = 1mA

m VGS = 10V, ID = 30A 

VGS = 4.5V, ID = 30A 

V VDS = VGS, ID = 25µA

mV/°C

µA VDS = 20V, VGS = 0V

nA VGS = 20V

VGS = -20V

S VDS = 5.0V, ID = 30A

nC VGS = 10V, VDS = 13V, ID = 30A

VDS = 13V

VGS = 4.5V

ID = 30A

nC VDS = 16V, VGS = 0V



VDD = 13V, VGS = 4.5V

ID = 30A

RG=1.8

VGS = 0V

VDS = 13V

ƒ = 1.0MHz

Max.

Units

Conditions

A MOSFET symbol

showing the

integral reverse

p-n junction diode.

V TJ = 25°C, IS = 30A, VGS = 0V 

ns TJ = 25°C, IF = 30A, VDD = 13V

nC di/dt = 200A/µs 

Typ.

–––

Max.

4.4

Units

°C/W

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IRFHM4234TRPBF Datasheet

Power MOSFET

IRFHM4234TRPBF Datasheet

Power MOSFET

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