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International Rectifier Electronic Components Datasheet

IRFHM7194TRPBF Datasheet

Power MOSFET

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VDSS
RDS(on) max
(@ VGS = 10V)
Qg (typical)
Rg (typical)
ID
(@TC (Bottom) = 25°C)
100
16.4
13
2.0
34
V
m
nC
A
 
Applications
 Primary Switch for High Frequency 48V/60V Telecom DC-DC Power Supplies
 Secondary Side Synchronous Rectifier
FastIRFET™
IRFHM7194TRPbF
HEXFET® Power MOSFET
 
PQFN 3.3 x 3.3 mm
Features
Low RDSon (<16.4m)
Low Charge (typical 13nC)
Low Thermal Resistance to PCB (<3.4°C/W)
Low Profile (<0.9 mm)
Industry-Standard Pinout
Compatible with Existing Surface Mount Techniques
RoHS Compliant, Halogen-Free
MSL1, Industrial Qualification
Benefits
Lower Conduction Losses
Low Switching Losses
Enable better thermal dissipation
results in Increased Power Density
 Multi-Vendor Compatibility
Easier Manufacturing
Environmentally Friendlier
Increased Reliability
Base part number
 
IRFHM7194TRPbF
Package Type
 
PQFN 3.3mm x 3.3mm
Standard Pack
Form
Quantity
Tape and Reel
4000
Orderable Part Number
IRFHM7194TRPbF
Absolute Maximum Ratings
VGS
ID @ TA = 25°C
ID @ TC(Bottom) = 25°C
ID @ TC(Bottom) = 100°C
IDM
PD @TA = 25°C
PD @TC(Bottom) = 25°C
TJ
TSTG
Parameter
Gate-to-Source Voltage
Continuous Drain Current, VGS @ 10V
Continuous Drain Current, VGS @ 10V
Continuous Drain Current, VGS @ 10V
Pulsed Drain Current
Power Dissipation
Power Dissipation
Linear Derating Factor
Operating Junction and
Storage Temperature Range
 
Max.
± 20
9.3
34
21
95
2.8
37
0.022
-55 to + 150
 
Units
V
A 
W
W/°C
°C
Notes through are on page 8
1 www.irf.com © 2015 International Rectifier
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March 31, 2015


International Rectifier Electronic Components Datasheet

IRFHM7194TRPBF Datasheet

Power MOSFET

No Preview Available !

  IRFHM7194TRPbF
Static @ TJ = 25°C (unless otherwise specified)
Parameter
BVDSS
BVDSS/TJ
RDS(on)
VGS(th)
VGS(th)
IDSS
IGSS
Drain-to-Source Breakdown Voltage
Breakdown Voltage Temp. Coefficient
Static Drain-to-Source On-Resistance
Gate Threshold Voltage
Gate Threshold Voltage Coefficient
Drain-to-Source Leakage Current
Gate-to-Source Forward Leakage
Gate-to-Source Reverse Leakage
gfs Forward Transconductance
Qg
Qgs1
Qgs2
Qgd
Qgodr
Qsw
Qoss
RG
td(on)
tr
td(off)
tf
Ciss
Coss
Crss
Total Gate Charge
Pre-Vth Gate-to-Source Charge
Post-Vth Gate-to-Source Charge
Gate-to-Drain Charge
Gate Charge Overdrive
Switch Charge (Qgs2 + Qgd)
Output Charge
Gate Resistance
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Min.
100
–––
–––
2.0
–––
–––
–––
–––
45
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
 
Typ.
–––
48
13.7
––
-5.5
–––
–––
–––
–––
13
1.8
0.9
4.3
6.0
5.2
40
2.1
2.7
3.3
8.0
2.5
733
374
11
    
Max. Units
Conditions
–––
–––
16.4
3.6
–––
V VGS = 0V, ID = 250µA
mV/°C Reference to 25°C, ID = 1mA
mVGS = 10V, ID = 20A
V VDS = VGS, ID = 50µA
mV/°C
1.0
100
-100
–––
19
µA VDS = 80V, VGS = 0V
nA
VGS = 20V
VGS = -20V
S VDS = 25V, ID = 20A
––– VDS = 50V
–––
–––
nC  
VGS = 10V
ID = 20A
–––
–––
––– nC VDS = 50V, VGS = 0V
–––  
––– VDD = 50V, VGS = 10V
–––
–––
ns  
ID = 20A
RG= 1.0
–––
––– VGS = 0V
––– pF   VDS = 50V
––– ƒ = 1.0MHz
Avalanche Characteristics
Parameter
EAS (Thermally limited)
Single Pulse Avalanche Energy
IAR Avalanche Current
 
Typ.
–––
–––
 
Max.
220
12
 
Units
mJ
A
Diode Characteristics
Parameter
IS Continuous Source Current
(Body Diode)
ISM Pulsed Source Current
(Body Diode)
VSD Diode Forward Voltage
trr Reverse Recovery Time
Qrr Reverse Recovery Charge
Min.
–––
–––
–––
–––
–––
 
Typ.
–––
–––
0.8
30
26
  
Max. Units
34
A
95
1.3 V
45 ns
39 nC
 
Conditions
MOSFET symbol
D
showing the
integral reverse
G
p-n junction diode.
S
TJ = 25°C, IS = 20A, VGS = 0V
TJ = 25°C, IF = 20A, VDD = 50V
di/dt = 100A/µs
Thermal Resistance
Parameter
RJC (Bottom)
RJC (Top)
RJA
RJA (<10s)
Junction-to-Case
Junction-to-Case
Junction-to-Ambient
Junction-to-Ambient
 
Typ.
–––
–––
–––
–––
 
Max.
3.4
35
45
29
 
Units
°C/W
2 www.irf.com © 2015 International Rectifier
Submit Datasheet Feedback
March 31, 2015


Part Number IRFHM7194TRPBF
Description Power MOSFET
Maker International Rectifier
Total Page 9 Pages
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