IRFHM7194TRPBF Datasheet | International Rectifier

Features Low RDSon (<16.4m) Low Charge (typical 13n C) Low Thermal Resistance to PCB (<3.4°C/W) Low Profile (<0.9 mm) Industry-Standard Pinout patible with Existing Surface Mount Techniques Ro HS pliant, Halogen-Free MSL1, Industrial Qualification Benefits Lower Conduction Losses Low Switching Losses Enable better thermal dissipation results in Increased Power Density  Multi-Vendor patibility Easier Manufacturing Environmentally Friendlier Increased Reliability Base part number   IRFHM7194TRPb F Package Type   PQFN 3.3mm x 3.3mm Standard Pack Form Quantity Tape and Reel Orderable Part Number IRFHM7194TRPb F Absolute Maximum Ratings VGS ID @ TA = 25°C ID @ TC(Bottom) = 25°C ID @ TC(Bottom) = 100°C IDM PD @TA = 25°C PD @TC(Bottom) = 25°C TJ TSTG Parameter Gate-to-Source Voltage Continuous Drain Current, VGS @ 10V Continuous Drain Current, VGS @ 10V Continuous Drain Current, VGS @ 10V Pulsed Drain Current  Power Dissipation  Power Dissipation  Linear Derating Factor  Operating Junction and Storage Temperature Range   Max. ± 20 9.3 34 21 95 2.8 37 0.022 -55 to + 150   Units V A  W W/°C °C Notes  through  are on page 8 1 .irf. © 2015 International Rectifier Submit Datasheet Feedback March 31, 2015   IRFHM7194TRPb F Static @ TJ = 25°C (unless otherwise specified) Parameter BVDSS BVDSS/TJ RDS(on) VGS(th) VGS(th) IDSS IGSS Drain-to-Source Breakdown Voltage Breakdown Voltage Temp. Coefficient Static Drain-to-Source On-Resistance Gate Threshold Voltage Gate Threshold Voltage Coefficient Drain-to-Source Leakage Current Gate-to-Source Forward Leakage Gate-to-Source Reverse Leakage gfs Forward Transconductance Qg Qgs1 Qgs2 Qgd Qgodr Qsw Qoss RG td(on) tr td(off) tf Ciss Coss Crss Total Gate Charge Pre-Vth Gate-to-Source Charge Post-Vth Gate-to-Source Charge Gate-to-Drain Charge Gate Charge Overdrive Switch Charge (Qgs2 + Qgd) Output Charge Gate Resistance Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Input Capacitance Output...