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International Rectifier Electronic Components Datasheet

IRFHM792PBF Datasheet

Power MOSFET

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VDS
Vgs max
RDS(on) max
(@VGS = 10V)
Qg typ
ID
(@Tc(Bottom) = 25°C)
100
± 20
195
4.2
h3.4
V
V
mΩ
nC
A
TOP VIEW
D DD D
8 765
1 234
S GS G
IRFHM792PbF
HEXFET® Power MOSFET
SG
G
S
D
D
D
D
D
D
PQFN Dual 3.3X3.3 mm
Applications
DC-DC Primary Switch
48V Battery Monitoring
Features and Benefits
Features
Low RDSon (<195mΩ)
Low Thermal Resistance to PCB (< 12°C/W)
Low Profile (<1.2mm)
Industry-Standard Pinout
Compatible with Existing Surface Mount Techniques
RoHS Compliant Containing no Lead, no Bromide and no Halogen
MSL1, Industrial Qualification
Benefits
Lower Conduction Losses
Enable better thermal dissipation
results in Increased Power Density
Multi-Vendor Compatibility
Easier Manufacturing
Environmentally Friendlier
Increased Reliability
Orderable part number
IRFHM792TRPBF
IRFHM792TR2PBF
Package Type
PQFN Dual 3.3mm x 3.3mm
PQFN Dual 3.3mm x 3.3mm
Standard Pack
Form
Quantity
Tape and Reel
4000
Tape and Reel
400
Note
EOL notice # 259
Absolute Maximum Ratings
Parameter
VDS Drain-to-Source Voltage
VGS
ID @ TA = 25°C
ID @ TA = 70°C
ID @ TC(Bottom) = 25°C
ID @ TC(Bottom) = 100°C
ID @ TC = 25°C
IDM
PD @TA = 25°C
PD @TC(Bottom) = 25°C
Gate-to-Source Voltage
Continuous Drain Current, VGS @ 10V
Continuous Drain Current, VGS @ 10V
Continuous Drain Current, VGS @ 10V
Continuous Drain Current, VGS @ 10V
cContinuous Drain Current, VGS @ 10V (Wirebond Limited)
Pulsed Drain Current
gPower Dissipation
gPower Dissipation
gLinear Derating Factor
TJ
TSTG
Operating Junction and
Storage Temperature Range
Max.
100
± 20
2.3
1.8
4.8 h
3.1
3.4h
14
2.3
10.4
0.018
-55 to + 150
Units
V
A
W
W/°C
°C
Notes  through † are on page 9
1 www.irf.com © 2013 International Rectifier
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December 16, 2013


International Rectifier Electronic Components Datasheet

IRFHM792PBF Datasheet

Power MOSFET

No Preview Available !

IRFHM792PbF
Static @ TJ = 25°C (unless otherwise specified)
Parameter
Min. Typ. Max. Units
Conditions
BVDSS
ΔΒVDSS/ΔTJ
RDS(on)
VGS(th)
ΔVGS(th)
IDSS
IGSS
gfs
Qg
Qgs1
Qgs2
Qgd
Qgodr
Qsw
Qoss
RG
td(on)
tr
td(off)
tf
Ciss
Coss
Crss
Drain-to-Source Breakdown Voltage
Breakdown Voltage Temp. Coefficient
Static Drain-to-Source On-Resistance
Gate Threshold Voltage
Gate Threshold Voltage Coefficient
Drain-to-Source Leakage Current
Gate-to-Source Forward Leakage
Gate-to-Source Reverse Leakage
Forward Transconductance
Total Gate Charge
Pre-Vth Gate-to-Source Charge
Post-Vth Gate-to-Source Charge
Gate-to-Drain Charge
Gate Charge Overdrive
Switch Charge (Qgs2 + Qgd)
Output Charge
Gate Resistance
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
100 ––– –––
V VGS = 0V, ID = 250μA
––– 0.11 ––– V/°C Reference to 25°C, ID = 1.0mA
e––– 164 195 mΩ VGS = 10V, ID = 2.9A
2.0 3.0 4.0
V VDS = VGS, ID = 10μA
––– -8.2 ––– mV/°C
––– ––– 20
μA VDS = 100V, VGS = 0V
––– ––– 250 mA VDS = 100V, VGS = 0V, TJ = 125°C
––– ––– 100
––– ––– -100
nA
VGS = 20V
VGS = -20V
3.5 ––– –––
S VDS = 50V, ID = 2.9A
––– 4.2 6.3
––– 0.7 –––
VDS = 50V
––– 0.3
––– 1.3
–––
–––
nC
VGS = 10V
ID = 2.9A
––– 1.9 –––
––– 1.6 –––
––– 6.7 ––– nC VDS = 16V, VGS = 0V
––– 1.6 –––
Ω
––– 3.4 –––
VDD = 50V, VGS = 10V
––– 4.7
––– 5.2
–––
–––
ns
ID = 2.9A
RG=1.8Ω
––– 2.6 –––
––– 251 –––
––– 31 –––
––– 13 –––
VGS = 0V
pF VDS = 25V
ƒ = 1.0MHz
Avalanche Characteristics
Parameter
dEAS Single Pulse Avalanche Energy
™IAR Avalanche Current
Typ.
–––
–––
Max.
10.2
2.9
Units
mJ
A
Diode Characteristics
Parameter
Min. Typ. Max. Units
Conditions
IS Continuous Source Current
(Body Diode)
ISM Pulsed Source Current
Ù(Body Diode)
VSD Diode Forward Voltage
trr Reverse Recovery Time
Qrr Reverse Recovery Charge
ton Forward Turn-On Time
h––– ––– 3.4
––– –––
––– –––
14
1.3
MOSFET symbol
D
A
showing the
integral reverse
G
p-n junction diode.
S
eV TJ = 25°C, IS = 2.9A, VGS = 0V
––– 15 23 ns TJ = 25°C, IF = 2.9A, VDD = 50V
––– 45 68 nC di/dt = 500A/μs
Time is dominated by parasitic Inductance
Thermal Resistance
RθJC (Bottom)
RθJC (Top)
RθJA
RθJA (<10s)
Parameter
fJunction-to-Case
fJunction-to-Case
gJunction-to-Ambient
gJunction-to-Ambient
Typ.
–––
–––
–––
–––
Max.
12
85
55
38
Units
°C/W
2 www.irf.com © 2013 International Rectifier
Submit Datasheet Feedback
December 16, 2013


Part Number IRFHM792PBF
Description Power MOSFET
Maker International Rectifier
Total Page 9 Pages
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