IRFHM792PbF
Static @ TJ = 25°C (unless otherwise specified)
Parameter
Min. Typ. Max. Units
Conditions
BVDSS
ΔΒVDSS/ΔTJ
RDS(on)
VGS(th)
ΔVGS(th)
IDSS
IGSS
gfs
Qg
Qgs1
Qgs2
Qgd
Qgodr
Qsw
Qoss
RG
td(on)
tr
td(off)
tf
Ciss
Coss
Crss
Drain-to-Source Breakdown Voltage
Breakdown Voltage Temp. Coefficient
Static Drain-to-Source On-Resistance
Gate Threshold Voltage
Gate Threshold Voltage Coefficient
Drain-to-Source Leakage Current
Gate-to-Source Forward Leakage
Gate-to-Source Reverse Leakage
Forward Transconductance
Total Gate Charge
Pre-Vth Gate-to-Source Charge
Post-Vth Gate-to-Source Charge
Gate-to-Drain Charge
Gate Charge Overdrive
Switch Charge (Qgs2 + Qgd)
Output Charge
Gate Resistance
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
100 ––– –––
V VGS = 0V, ID = 250μA
––– 0.11 ––– V/°C Reference to 25°C, ID = 1.0mA
e––– 164 195 mΩ VGS = 10V, ID = 2.9A
2.0 3.0 4.0
V VDS = VGS, ID = 10μA
––– -8.2 ––– mV/°C
––– ––– 20
μA VDS = 100V, VGS = 0V
––– ––– 250 mA VDS = 100V, VGS = 0V, TJ = 125°C
––– ––– 100
––– ––– -100
nA
VGS = 20V
VGS = -20V
3.5 ––– –––
S VDS = 50V, ID = 2.9A
––– 4.2 6.3
––– 0.7 –––
VDS = 50V
––– 0.3
––– 1.3
–––
–––
nC
VGS = 10V
ID = 2.9A
––– 1.9 –––
––– 1.6 –––
––– 6.7 ––– nC VDS = 16V, VGS = 0V
––– 1.6 –––
Ω
––– 3.4 –––
VDD = 50V, VGS = 10V
––– 4.7
––– 5.2
–––
–––
ns
ID = 2.9A
RG=1.8Ω
––– 2.6 –––
––– 251 –––
––– 31 –––
––– 13 –––
VGS = 0V
pF VDS = 25V
ƒ = 1.0MHz
Avalanche Characteristics
Parameter
dEAS Single Pulse Avalanche Energy
IAR Avalanche Current
Typ.
–––
–––
Max.
10.2
2.9
Units
mJ
A
Diode Characteristics
Parameter
Min. Typ. Max. Units
Conditions
IS Continuous Source Current
(Body Diode)
ISM Pulsed Source Current
Ã(Body Diode)
VSD Diode Forward Voltage
trr Reverse Recovery Time
Qrr Reverse Recovery Charge
ton Forward Turn-On Time
h––– ––– 3.4
––– –––
––– –––
14
1.3
MOSFET symbol
D
A
showing the
integral reverse
G
p-n junction diode.
S
eV TJ = 25°C, IS = 2.9A, VGS = 0V
eÖ–– 15 23 ns TJ = 25°C, IF = 2.9A, VDD = 50V
––– 45 68 nC di/dt = 500A/μs
Time is dominated by parasitic Inductance
Thermal Resistance
RθJC (Bottom)
RθJC (Top)
RθJA
RθJA (<10s)
Parameter
fJunction-to-Case
fJunction-to-Case
gJunction-to-Ambient
gJunction-to-Ambient
Typ.
–––
–––
–––
–––
Max.
12
85
55
38
Units
°C/W
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December 16, 2013
