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IRFHM4234TRPBF - Power MOSFET

General Description

Dimension design to accommodate the co

Key Features

  • Low Charge (typical 8.2 nC) Low RDSon (.

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The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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VDSS RDS(on) max (@ VGS = 10V) (@ VGS = 4.5V) Qg (typical) ID (@TC (Bottom) = 25°C) 25 4.4 7.1 8.2 60 V m nC A Applications Control MOSFET for synchronous buck converter   Top View D5 D6 D7 D8 4G 3S 2S 1S FastIRFET™ IRFHM4234TRPbF HEXFET® Power MOSFET   PQFN 3.3 x 3.3 mm Features Low Charge (typical 8.2 nC) Low RDSon (<4.4 m) Low Thermal Resistance to PCB (<4.4°C/W) Low Profile (<0.