IRFHM8228PbF
Static @ TJ = 25°C (unless otherwise specified)
Parameter
BVDSS
Drain-to-Source Breakdown Voltage
BVDSS/TJ Breakdown Voltage Temp. Coefficient
RDS(on)
Static Drain-to-Source On-Resistance
VGS(th)
VGS(th)
IDSS
Gate Threshold Voltage
Gate Threshold Voltage Coefficient
Drain-to-Source Leakage Current
IGSS
gfs
Qg
Qg
Qgs1
Qgs2
Qgd
Qgodr
Qsw
Qoss
RG
td(on)
tr
td(off)
tf
Ciss
Coss
Crss
Gate-to-Source Forward Leakage
Gate-to-Source Reverse Leakage
Forward Transconductance
Total Gate Charge
Total Gate Charge
Pre-Vth Gate-to-Source Charge
Post-Vth Gate-to-Source Charge
Gate-to-Drain Charge
Gate Charge Overdrive
Switch Charge (Qgs2 + Qgd)
Output Charge
Gate Resistance
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Avalanche Characteristics
Parameter
EAS Single Pulse Avalanche Energy
Min.
25
–––
–––
–––
1.35
–––
–––
–––
–––
–––
63
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
Typ.
–––
18
4.2
6.7
1.8
-6.6
–––
–––
–––
–––
–––
18
9.0
2.7
1.0
3.1
2.2
4.1
9.7
1.7
11
22
13
6.2
1667
456
195
Max.
–––
–––
5.2
8.7
2.35
–––
1.0
150
100
-100
–––
–––
14
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
Units
Conditions
V VGS = 0V, ID = 250µA
mV/°C Reference to 25°C, ID = 1mA
m VGS = 10V, ID = 20A
VGS = 4.5V, ID = 16A
V
mV/°C
VDS = VGS, ID = 25µA
µA VDS = 20V, VGS = 0V
VDS = 20V, VGS = 0V, TJ = 125°C
nA VGS = 20V
VGS = -20V
S VDS = 10V, ID = 20A
nC VGS = 10V, VDS = 13V, ID = 20A
nC
nC
ns
pF
VDS = 13V
VGS = 4.5V
ID = 20A
VDS = 16V, VGS = 0V
VDD = 13V, VGS = 4.5V
ID = 20A
RG=1.8
VGS = 0V
VDS = 10V
ƒ = 1.0MHz
Typ.
–––
Max.
50
Units
mJ
Diode Characteristics
Parameter
IS Continuous Source Current
(Body Diode)
ISM Pulsed Source Current
(Body Diode)
VSD Diode Forward Voltage
trr Reverse Recovery Time
Qrr Reverse Recovery Charge
Thermal Resistance
Parameter
RJC (Bottom)
RJC (Top)
RJA
RJA (<10s)
Junction-to-Case
Junction-to-Case
Junction-to-Ambient
Junction-to-Ambient
Min. Typ. Max. Units
Conditions
–––
–––
–––
–––
25
A
260
MOSFET symbol
showing the
integral reverse
p-n junction diode.
G
––– ––– 1.0 V TJ = 25°C, IS = 20A, VGS = 0V
––– 14 21 ns TJ = 25°C, IF = 20A, VDD = 13V
––– 10 15 nC di/dt = 260A/µs
D
S
Typ.
–––
–––
–––
–––
Max.
3.7
41
44
29
Units
°C/W
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June 30, 2014
