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IRFHM8363PbF
VDS Vgs
max
30 ± 20 14.9 20.4 6.7 10
V
X @ D W Ã Q P U
HEXFET® Power MOSFET
V
'
RDS(on) max
(@VGS = 10V) (@VGS = 4.5V)
'
'
S
'
mΩ nC
* 6 * 6
G D D D D D
S
G
Qg typ ID
(@Tc(Bottom) = 25°C)
D
i
PQFN Dual 3.3X3.3 mm
A
Applications
• Power Stage for high frequency buck converters • Battery Protection charge and discharge switches
Features and Benefits
Features Low Thermal Resistance to PCB (< 6.7°C/W) Low Profile (<1.