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International Rectifier Electronic Components Datasheet

IRFHM9391TRPBF Datasheet

Power MOSFET

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VDSS
RDS(on) max
(@ VGS = -10V)
(@ VGS = -4.5V)
Qg (typical)
ID
(@TA = 25°C)
-30
14.6
22.5
32
-11
V
m
nC
A
Applications
System/load switch,
Charge or discharge switch for battery protection
 
D5
D6
D7
D8
IRFHM9391TRPbF
HEXFET® Power MOSFET
4G
 
3S
2S
1S
PQFN 3.3 x 3.3 mm
Features
Low Thermal Resistance to PCB (<3.8°C/W)
Low Profile (<1.05 mm)
Industry-Standard Pinout
Compatible with Existing Surface Mount Techniques
RoHS Compliant, Halogen-Free
MSL1,Consumer Qualification
Benefits
Enable better Thermal Dissipation
results in Increased Power Density
 Multi-Vendor Compatibility
Easier Manufacturing
Environmentally Friendlier
Increased Reliability
Base part number
 
IRFHM9391PbF
Package Type
 
PQFN 3.3mm x 3.3mm
Standard Pack
Form
Quantity
Tape and Reel
4000
Orderable Part Number
IRFHM9391TRPbF
Absolute Maximum Ratings
VGS
ID @ TA = 25°C
ID @ TA= 70°C
IDM
ID @ TC(Bottom) = 25°C
ID @ TC(Bottom) = 100°C
ID @ TC = 25°C
PD @TA = 25°C
PD @TC(Bottom) = 25°C
TJ
TSTG
Parameter
Gate-to-Source Voltage
Continuous Drain Current, VGS @ 10V
Continuous Drain Current, VGS @ 10V
Pulsed Drain Current
Continuous Drain Current, VGS @ 10V
Continuous Drain Current, VGS @ 10V
Continuous Drain Current, VGS @ 10V
(Source Bonding Technology Limited)
Power Dissipation
Power Dissipation
Linear Derating Factor
Operating Junction and
Storage Temperature Range
Notes through are on page 9
 
Max.
± 25
-11
-9.0
-90
-38
-24
-24
2.6
33
0.021
-55 to + 150
 
Units
V
A 
W
W/°C
°C
1 www.irf.com © 2014 International Rectifier
Submit Datasheet Feedback
July 01, 2014


International Rectifier Electronic Components Datasheet

IRFHM9391TRPBF Datasheet

Power MOSFET

No Preview Available !

  IRFHM9391TRPbF
Static @ TJ = 25°C (unless otherwise specified)
Parameter
BVDSS
Drain-to-Source Breakdown Voltage
BVDSS/TJ Breakdown Voltage Temp. Coefficient
RDS(on)
Static Drain-to-Source On-Resistance
VGS(th)
VGS(th)
Gate Threshold Voltage
Gate Threshold Voltage Coefficient
IDSS Drain-to-Source Leakage Current  
IGSS
gfs
Qg
Qg
Qgs1
Qgs2
Qgd
Qgodr
Qsw
Qoss
RG
td(on)
tr
td(off)
tf
Ciss
Coss
Crss
Gate-to-Source Forward Leakage
Gate-to-Source Reverse Leakage
Forward Transconductance
Total Gate Charge
Total Gate Charge
Pre-Vth Gate-to-Source Charge
Post-Vth Gate-to-Source Charge
Gate-to-Drain Charge
Gate Charge Overdrive
Switch Charge (Qgs2 + Qgd)
Output Charge
Gate Resistance
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Avalanche Characteristics
Parameter
EAS Single Pulse Avalanche Energy
Min.
-30
–––
–––
–––
–––
-1.3
–––
–––
–––
–––
–––
16
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
 
Typ.
–––
0.02
10
11.7
18
-1.8
-5.1
–––
–––
–––
–––
–––
16
32
3.0
1.4
8.0
19.6
9.4
9.0
16
11
27
72
60
1543
310
208
 
Max.
–––
–––
–––
14.6
22.5
-2.4
–––
-1.0
-150
-10
10
–––
–––
48
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
  
Units
Conditions
V VGS = 0V, ID = -250µA
V/°C Reference to 25°C, ID = -1mA
mVGS = -20V, ID = -11A
  VGS = -10V, ID = -11A
  VGS = -4.5V, ID = -11A
V
mV/°C
VDS = VGS, ID = -25µA
µA
VDS = -24V, VGS = 0V
VDS = -24V, VGS = 0V,TJ = 125°C
µA VGS = -25V
VGS = 25V
S VDS = -10V, ID = -9.0A
nC VGS = -4.5V, VDS =-15V, ID = -9.0A
 
nC
 
 
 
nC
 
ns
 
 
pF
 
VDS = -15V
VGS = -10V
ID = -9.0A
VDS = -16V, VGS = 0V
VDD = -15V, VGS = -4.5V
ID = -1.0A
RG=6.8
VGS = 0V
VDS = -25V
ƒ = 1.0KHz
Typ.
 
Max.
 
Units
––– 75 mJ
Diode Characteristics
Parameter
IS Continuous Source Current
(Body Diode)
ISM Pulsed Source Current
(Body Diode)
VSD Diode Forward Voltage
trr Reverse Recovery Time
Qrr Reverse Recovery Charge
Thermal Resistance
RJC (Bottom)
RJC (Top)
RJA
RJA (<10s)
Parameter
Junction-to-Case
Junction-to-Case
Junction-to-Ambient
Junction-to-Ambient
Min.
–––
–––
–––
–––
–––
 
Typ.
–––
–––
–––
64
25
  
 
Max. Units
Conditions
-2.8 MOSFET symbol
D
-90
A 
showing the
integral reverse
G
p-n junction diode.
S
-1.2 V TJ = 25°C, IS = -2.8A, VGS = 0V 
96 ns TJ = 25°C, IF = -2.8A, VDD = -24V
38 nC di/dt = 100A/µs
 
Typ.
–––
–––
–––
–––
 
Max.
3.8
42
47
32
 
Units
°C/W
2 www.irf.com © 2014 International Rectifier
Submit Datasheet Feedback
July 01, 2014


Part Number IRFHM9391TRPBF
Description Power MOSFET
Maker International Rectifier
Total Page 9 Pages
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