IRFHS8242PBF Datasheet | International Rectifier

Features and Benefits Features Low RDSon (≤ 13.0mΩ) Low Thermal Resistance to PCB (≤ 13°C/W) Low Profile (≤ 1.0 mm) patible with Existing Surface Mount Techniques Ro HS pliant Containing no Lead, no Bromide and no Halogen MSL1, Industrial Qualification TOP VIEW IRFHS8242Pb F HEXFET® Power MOSFET D1 D2 G3 6D D 5D S 4S 2mm x 2mm PQFN results in Resulting Benefits Lower Conduction Losses Enable better thermal dissipation Increased Power Density Easier Manufacturing Environmentally Friendlier Increased Reliability Orderable part number IRFHS8242TRPb F IRFHS8242TR2Pb F Package Type PQFN 2mm x 2mm PQFN 2mm x 2mm Standard Pack Form Quantity Tape and Reel Tape and Reel Note EOL notice # 259 Absolute Maximum Ratings Parameter VDS Drain-to-Source Voltage VGS ID @ TA = 25°C ID @ TA = 70°C ID @ TC(Bottom) = 25°C ID @ TC(Bottom)= 70°C ID @ TC(Bottom) = 25°C IDM PD @TA = 25°C PD @TA = 70°C Gate-to-Source Voltage Continuous Drain Current, VGS @ 10V Continuous Drain Current, VGS @ 10V Continuous Drain Current, VGS @ 10V Continuous Drain Current, VGS @ 10V c Continuous Drain Current, VGS @ 10V (Package Limited) Pulsed Drain Current f Power Dissipation f Power Dissipation f Linear Derating Factor TJ TSTG Operating Junction and Storage Temperature Range Max. 25 ±20 9.9d 21d 17d 8.5d 84 2.1 1.3 0.02 -55 to + 150 Units...