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International Rectifier Electronic Components Datasheet

IRFHS8242PBF Datasheet

HEXFET Power MOSFET

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VDS
VGS max
RDS(on) max
(@VGS = 10V)
Qg (typical)
( @ VGS = 4.5V)
ID
(@Tc(Bottom) = 25°C)
Applications
System/Load Switch
25
±20
13.0
4.3
d8.5
V
V
mΩ
nC
A
Features and Benefits
Features
Low RDSon (13.0mΩ)
Low Thermal Resistance to PCB (13°C/W)
Low Profile (1.0 mm)
Compatible with Existing Surface Mount Techniques
RoHS Compliant Containing no Lead, no Bromide and no Halogen
MSL1, Industrial Qualification
TOP VIEW
IRFHS8242PbF
HEXFET® Power MOSFET
D1
D2
G3
6D
D 5D
S 4S
D
D
DG
D
D
S
S
2mm x 2mm PQFN
results in
Resulting Benefits
Lower Conduction Losses
Enable better thermal dissipation
Increased Power Density
Easier Manufacturing
Environmentally Friendlier
Increased Reliability
Orderable part number
IRFHS8242TRPbF
IRFHS8242TR2PbF
Package Type
PQFN 2mm x 2mm
PQFN 2mm x 2mm
Standard Pack
Form
Quantity
Tape and Reel
4000
Tape and Reel
400
Note
EOL notice # 259
Absolute Maximum Ratings
Parameter
VDS Drain-to-Source Voltage
VGS
ID @ TA = 25°C
ID @ TA = 70°C
ID @ TC(Bottom) = 25°C
ID @ TC(Bottom)= 70°C
ID @ TC(Bottom) = 25°C
IDM
PD @TA = 25°C
PD @TA = 70°C
Gate-to-Source Voltage
Continuous Drain Current, VGS @ 10V
Continuous Drain Current, VGS @ 10V
Continuous Drain Current, VGS @ 10V
Continuous Drain Current, VGS @ 10V
cContinuous Drain Current, VGS @ 10V (Package Limited)
Pulsed Drain Current
fPower Dissipation
fPower Dissipation
fLinear Derating Factor
TJ
TSTG
Operating Junction and
Storage Temperature Range
Max.
25
±20
9.9d
8.0
21d
17d
8.5d
84
2.1
1.3
0.02
-55 to + 150
Units
V
A
W
W/°C
°C
Notes  through † are on page 2
1 www.irf.com © 2013 International Rectifier
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December 17, 2013


International Rectifier Electronic Components Datasheet

IRFHS8242PBF Datasheet

HEXFET Power MOSFET

No Preview Available !

IRFHS8242PbF
Static @ TJ = 25°C (unless otherwise specified)
Parameter
Min. Typ. Max. Units
Conditions
BVDSS
ΔΒVDSS/ΔTJ
RDS(on)
Drain-to-Source Breakdown Voltage
Breakdown Voltage Temp. Coefficient
Static Drain-to-Source On-Resistance
VGS(th)
ΔVGS(th)
IDSS
Gate Threshold Voltage
Gate Threshold Voltage Coefficient
Drain-to-Source Leakage Current
IGSS Gate-to-Source Forward Leakage
Gate-to-Source Reverse Leakage
gfs Forward Transconductance
hQg Total Gate Charge
hQg Total Gate Charge
hQgs Gate-to-Source Charge
hQgd Gate-to-Drain Charge
RG
td(on)
tr
td(off)
tf
Ciss
Gate Resistance
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Input Capacitance
Coss Output Capacitance
Crss Reverse Transfer Capacitance
Diode Characteristics
25 ––– –––
V VGS = 0V, ID = 250μA
––– 18 ––– mV/°C Reference to 25°C, ID = 1mA
ed–––
e–––
10.0
17.0
13.0
21.0
mΩ
VGS = 10V, ID = 8.5A
VGS = 4.5V, ID = 6.8A
1.35
–––
1.8
-6.8
2.35
–––
V
mV/°C
VDS
= VGS,
ID
=
25μA
––– ––– 1.0
––– ––– 150
μA
VDS = 20V, VGS = 0V
VDS = 20V, VGS = 0V, TJ = 125°C
–––
–––
––– 100
––– -100
nA
VGS = 20V
VGS = -20V
19 ––– –––
dS VDS = 10V, ID = 8.5A
d––– 4.3 ––– nC VGS = 4.5V, VDS = 13V, ID = 8.5A
––– 10.4 –––
VDS = 13V
––– 1.8 ––– nC VGS = 10V
––– 1.6 –––
dID = 8.5A (See Fig. 6 & 16)
––– 1.9 ––– Ω
––– 6.5 –––
eVDD = 13V, VGS = 4.5V
d––– 19
––– 5.4
–––
–––
ns
ID = 8.5A
RG=1.8Ω
––– 5.3 –––
See Fig.17
––– 653 –––
––– 171 –––
––– 78 –––
VGS = 0V
pF VDS = 10V
ƒ = 1.0MHz
Parameter
Min. Typ. Max. Units
Conditions
IS Continuous Source Current
(Body Diode)
ISM Pulsed Source Current
Ù(Body Diode)
VSD Diode Forward Voltage
trr Reverse Recovery Time
Qrr Reverse Recovery Charge
d––– ––– 8.5
MOSFET symbol
D
A showing the
––– ––– 84
integral reverse
G
p-n junction diode.
S
––– ––– 1.0
d eV TJ = 25°C, IS = 8.5A , VGS = 0V
d––– 11 17 ns TJ = 25°C, IF = 8.5A , VDD = 13V
––– 11 17 nC di/dt = 280 A/μs
ton Forward Turn-On Time
Time is dominated by parasitic Inductance
Thermal Resistance
RθJC (Bottom)
RθJC (Top)
RθJA
RθJA
gJunction-to-Case
Parameter
gJunction-to-Case
fJunction-to-Ambient
fJunction-to-Ambient (<10s)
Typ.
–––
–––
–––
–––
Max.
13
90
60
42
Units
°C/W
Notes:
 Repetitive rating; pulse width limited by max. junction temperature.
‚ Current limited by package.
ƒ Pulse width 400μs; duty cycle 2%.
„ When mounted on 1 inch square copper board
… Rθ is measured at TJ of approximately 90°C.
… For DESIGN AID ONLY, not subject to production testing.
2 www.irf.com © 2013 International Rectifier
Submit Datasheet Feedback
December 17, 2013


Part Number IRFHS8242PBF
Description HEXFET Power MOSFET
Maker International Rectifier
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