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International Rectifier Electronic Components Datasheet

IRFHS9301PBF Datasheet

HEXFET Power MOSFET

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VDS
VGS max
RDS(on) max
(@VGS = -10V)
Qg (typical)
ID
(@TC = 25°C)
-30
±20
37
13
d-8.5
V
V
mΩ
nC
A
TOP VIEW
IRFHS9301PbF
HEXFET® Power MOSFET
D1
D2
G3
6D
D 5D
S 4S
D
D
DG
D
D
S
S
2mm x 2mm PQFN
Applications
l Charge and Discharge Switch for Battery Application
l System/load switch
Features and Benefits
Features
Low RDSon (37mΩ)
Low Thermal Resistance to PCB (13°C/W)
Low Profile (1.0 mm)
Compatible with Existing Surface Mount Techniques
RoHS Compliant Containing no Lead, no Bromide and no Halogen
MSL1, Industrial Qualification
results in
Benefits
Lower Conduction Losses
Enable better thermal dissipation
Increased Power Density
Easier Manufacturing
Environmentally Friendlier
Increased Reliability
Orderable part number
IRFHS9301TRPBF
IRFHS9301TR2PBF
Package Type
PQFN 2mm x 2mm
PQFN 2mm x 2mm
Standard Pack
Form
Tape and Reel
Tape and Reel
Quantity
4000
400
Absolute Maximum Ratings
VDS
VGS
ID @ TA = 25°C
ID @ TA = 70°C
ID @ TC = 25°C
ID @ TC = 70°C
ID @ TC = 25°C
IDM
PD @TA = 25°C
PD @ TA = 70°C
TJ
TSTG
Parameter
Drain-to-Source Voltage
Gate-to-Source Voltage
Continuous Drain Current, VGS @ -10V
Continuous Drain Current, VGS @ -10V
Continuous Drain Current, VGS @ -10V
Continuous Drain Current, VGS @ -10V
cContinuous Drain Current, VGS @ 10V (Package Limited)
Pulsed Drain Current
fPower Dissipation
fPower Dissipation
Linear Derating Factor
Operating Junction and
Storage Temperature Range
Max.
-30
± 20
-6.0
-4.8
-13d
-10d
d-8.5
-52
2.1
1.3
0.02
-55 to + 150
Note
EOL notice # 259
Units
V
A
W
W/°C
°C
Notes  through … are on page 2
1 www.irf.com © 2014 International Rectifier
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May 21, 2014


International Rectifier Electronic Components Datasheet

IRFHS9301PBF Datasheet

HEXFET Power MOSFET

No Preview Available !

IRFHS9301PbF
Static @ TJ = 25°C (unless otherwise specified)
Parameter
Min.
BVDSS
ΔΒVDSS/ΔTJ
RDS(on)
Drain-to-Source Breakdown Voltage
Breakdown Voltage Temp. Coefficient
Static Drain-to-Source On-Resistance
-30
–––
–––
–––
VGS(th)
ΔVGS(th)
IDSS
Gate Threshold Voltage
Gate Threshold Voltage Coefficient
Drain-to-Source Leakage Current
-1.3
–––
–––
–––
IGSS Gate-to-Source Forward Leakage
–––
Gate-to-Source Reverse Leakage
–––
gfs Forward Transconductance
9.3
Qg Total Gate Charge
Qg Total Gate Charge
Qgs Gate-to-Source Charge
Qgd Gate-to-Drain Charge
RG Gate Resistance
td(on)
Turn-On Delay Time
tr Rise Time
td(off)
Turn-Off Delay Time
tf Fall Time
Ciss Input Capacitance
Coss Output Capacitance
Crss Reverse Transfer Capacitance
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
Diode Characteristics
Parameter
IS Continuous Source Current
(Body Diode)
ÙISM Pulsed Source Current
(Body Diode)
VSD Diode Forward Voltage
trr Reverse Recovery Time
Qrr Reverse Recovery Charge
Thermal Resistance
RθJC (Bottom)
RθJC (Top)
RθJA
RθJA
Parameter
gJunction-to-Case
gJunction-to-Case
fJunction-to-Ambient
fJunction-to-Ambient (t<10s)
Min.
–––
–––
–––
–––
–––
Typ.
–––
0.02
30
52
-1.8
-4.8
–––
–––
–––
–––
–––
6.9
13
2.1
3.9
17
12
80
13
25
580
125
79
Typ.
–––
–––
–––
30
110
Max.
–––
–––
37
65
-2.4
–––
-1.0
-150
-100
100
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
Units
V
V/°C
mΩ
V
mV/°C
μA
nA
S
nC
nC
Conditions
VGS = 0V, ID = -250μA
Reference to 25°C, ID = -1mA
eVGS = -10V, ID = -7.8A
eVGS = -4.5V, ID = -6.2A
VDS = VGS, ID = -25μA
VDS = -24V, VGS = 0V
VDS = -24V, VGS = 0V, TJ = 125°C
VGS = -20V
VGS = 20V
VDS = -10V, ID = -7.8A
VDS = -15V,VGS = -4.5V,ID = - 7.8A
VGS = -10V
VDS = -15V
ID = -7.8A
eΩ
VDD = -15V, VGS = -4.5V
ns
ID = -7.8A
RG = 2.0Ω
See Figs. 19a & 19b
VGS = 0V
pF VDS = -25V
ƒ = 1.0KHz
Max.
d-8.5
-52
-1.2
45
170
Units
A
V
ns
nC
Conditions
MOSFET symbol
showing the
D
integral reverse
G
p-n junction diode.
S
eTJ = 25°C, IS = -7.8A, VGS = 0V
eTJ = 25°C, IF = -7.8A, VDD = -15V
di/dt = 280/μs
Typ.
–––
–––
–––
Max.
13
90
60
42
Units
°C/W
Notes:
 Repetitive rating; pulse width limited by max. junction temperature.
‚ Current limited by package.
ƒ Pulse width 400μs; duty cycle 2%.
„ When mounted on 1 inch square copper board.
… Rθ is measured at TJ of approximately 90°C.
.
2 www.irf.com © 2014 International Rectifier
Submit Datasheet Feedback
May 21, 2014


Part Number IRFHS9301PBF
Description HEXFET Power MOSFET
Maker International Rectifier
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IRFHS9301PBF Datasheet PDF





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International Rectifier





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