* n n n n n Hermetically Sealed Electrically Isolated Simple Drive Requirements Ease of Paralleling Ceramic Eyelets Absolute Maximum Ratings Parameter ID @ VGS = 10V, TC = 25°C I D @ VGS = 10V, TC = 100°C IDM PD @ TC = 25°C VGS EAS I AR EAR dv/dt TJ T STG Continuous Drain Current Continuous Drain C
IRFI260
International Rectifier
135.18 KB
N-channel power mosfet.
Previous Datasheet Index Next Data Sheet Provisional Data Sheet No. PD 9.809 HEXFET® TRANSISTOR 200 Volt, 0.060Ω, HEXFET HEXFET technology is the k.
📁 Related Datasheet
IRFI064 N-Channel Power MOSFET (International Rectifier)
IRFI1010 Power MOSFET (International Rectifier)
IRFI1010N Power MOSFET (International Rectifier)
IRFI1010N N-Channel MOSFET (INCHANGE)
IRFI1010NPBF Power MOSFET (International Rectifier)
IRFI1310G Power MOSFET (International Rectifier)
IRFI1310N Power MOSFET (International Rectifier)
IRFI1310N N-Channel MOSFET (INCHANGE)
IRFI1310NPBF Power MOSFET (Infineon)
IRFI1310NPBF Power MOSFET (International Rectifier)
