900,000+ datasheet pdf search and download

Datasheet4U offers most rated semiconductors data sheet pdf




International Rectifier Electronic Components Datasheet

IRFI260 Datasheet

N-Channel Power MOSFET

No Preview Available !

Previous Datasheet
Index
Next Data Sheet
Provisional Data Sheet No. PD 9.809
HEXFET® TRANSISTOR
IRFI260
N-CHANNEL
200Volt, 0.060, HEXFET
HEXFET technology is the key to International
Rectifier’s advanced line of power MOSFET transis-
tors. The efficient geometry design achieves ver y
low on-state resistance combined with high trans-
conductance.
HEXFET transistors also feature all of the well-es-
tablished advantages of MOSFETs, such as voltage
control, very fast switching, ease of paralleling and
electrical parameter temperature stability. They are
well-suited for applications such as switching power
supplies, motor controls, inverters, choppers, audio
amplifiers, high energy pulse circuits and virtually
any application where high reliability is required.
The HEXFET transistor’s totally isolated package
eliminates the need for additional isolating material
between the device and the heatsink. This improves
thermal efficiency and reduces drain capacitance.
Product Summary
Part Number
IRFI260
BVDSS
200V
Features:
n Hermetically Sealed
n Electrically Isolated
n Simple Drive Requirements
n Ease of Paralleling
n Ceramic Eyelets
RDS(on)
0.060
ID
45A*
Absolute Maximum Ratings
Parameter
ID @ VGS = 10V, TC = 25°C Continuous Drain Current
ID @ VGS = 10V, TC = 100°C Continuous Drain Current
IDM Pulsed Drain Current 
PD @ TC = 25°C
Max. Power Dissipation
Linear Derating Factor
IRFI260
45*
29
180
300
2.4
Units
A
W
W/K …
VGS
EAS
IAR
EAR
dv/dt
TJ
TSTG
Gate-to-Source Voltage
±20
Single Pulse Avalanche Energy ‚
700
Avalanche Current 
45
Repetitive Avalanche Energy 
30
Peak Diode Recovery dv/dt ƒ
4.3
Operating Junction
-55 to 150
Storage Temperature Range
Lead Temperature
300 (0.063 in. (1.6mm) from case for 10 sec.)
V
mJ
A
mJ
V/ns
oC
Weight
10.9 (typical)
g
* ID current limited by pin diameter
To Order


International Rectifier Electronic Components Datasheet

IRFI260 Datasheet

N-Channel Power MOSFET

No Preview Available !

Previous Datasheet
IRFI260 Device
Index
Next Data Sheet
Electrical Characteristics @ Tj = 25°C (Unless Otherwise Specified)
Parameter
Min.
BVDSS
Drain-to-Source Breakdown Voltage 200
BVDSS/TJ Temp. Coefficient of Breakdown Voltage —
RDS(on) Static Drain-to-Source
On-State Resistance
VGS(th)
Gate Threshold Voltage
2.0
gfs Forward Transconductance
22
IDSS
Zero Gate Voltage Drain Current
IGSS
IGSS
Qg
Qgs
Qgd
td(on)
tr
td(off)
tf
LD
Gate-to-Source Leakage Forward
Gate-to-Source Leakage Reverse
Total Gate Charge
Gate-to-Source Charge
Gate-to-Drain (“Miller”) Charge
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Internal Drain Inductance
Typ. Max. Units
Test Conditions
—— V
VGS = 0V, ID = 1.0 mA
0.24
— V/°C
0.060
0.068
4.0 V
— S( )
25 µA
250
100
-100
230
40
110
nA
nC
Reference to 25°C, ID = 1.0 mA
VGS = 10V, ID =29A „
VGS = 10V, ID = 45A
VDS = VGS, ID = 250µA
VDS 15V, IDS = 29A „
VDS=0.8 x Max Rating,VGS=0V
VDS = 0.8 x Max Rating
VGS = 0V, TJ = 125°C
VGS = 20V
VGS = -20V
VGS =10V, ID = 45A
VDS = Max. Rating x 0.5
— 29
— 120
— 110
ns
VDD = 100V, ID =45A,
RG = 2.35Ω, VGS =10V
— 92
8.7 —
Measured from the
drain lead, 6mm (0.25
in.) from package to
center of die.
Modified MOSFET
symbol showing the
internal inductances.
LS Internal Source Inductance
— 8.7 — nH Measured from the
source lead, 6mm
(0.25 in.) from package
to source bonding pad.
Ciss
Coss
Crss
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
— 5100 —
— 1100 —
— 280 —
pF
VGS = 0V, VDS = 25V
f = 1.0 MHz
To Order


Part Number IRFI260
Description N-Channel Power MOSFET
Maker International Rectifier
PDF Download

IRFI260 Datasheet PDF






Similar Datasheet

1 IRFI260 N-Channel Power MOSFET
International Rectifier





Part Number Start With

0    1    2    3    4    5    6    7    8    9    A    B    C    D    E    F    G    H    I    J    K    L    M    N    O    P    Q    R    S    T    U    V    W    X    Y    Z

Site map

Webmaste! click here

Contact us

Buy Components

Privacy Policy