IRFI260 - N-Channel Power MOSFET

International Rectifier (now Infineon)

Datasheet Details

Part number	IRFI260
Manufacturer	International Rectifier (now Infineon)
File Size	135.18 KB
Description	N-Channel Power MOSFET
Datasheet	IRFI260 Datasheet

Overview

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PD 9.809 HEXFET® TRANSISTOR 200 Volt, 0.060Ω, HEXFET HEXFET technology is the key to International Rectifier’s advanced line of power MOSFET transistors.

The efficient geometry design achieves ver y low on-state resistance combined with high transconductance.

Key Features

n n Hermetically Sealed Electrically Isolated Simple Drive Requirements Ease of Paralleling Ceramic Eyelets Absolute Maximum Ratings Parameter ID @ VGS = 10V, TC = 25°C I D @ VGS = 10V, TC = 100°C IDM PD @ TC = 25°C VGS EAS I AR EAR dv/dt TJ T STG Continuous Drain Current Continuous Drain Current Pulsed Drain Current Max. Power Dissipation Linear Derating Factor Gate-to-Source Voltage Single Pulse Avalanche Energy Avalanche Current Repetitive Avalanche Energy Peak Diode Recovery dv/dt.

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