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IRFI4019HG-117P - Digital Audio MOSFET

Description

This Digital Audio MosFET Half-Bridge is specifically designed for Class D audio amplifier applications.

It consists of two power MosFET switches connected in half-bridge configuration.

The latest process is used to achieve low on-resistance per silicon area.

Features

  • IRFI4019HG-117P Key Parameters 150 80 13 4.1 2.5 150 PD - 96274 Ÿ Ÿ Ÿ Ÿ Ÿ Ÿ Ÿ Ÿ Ÿ Ÿ Integrated Half-Bridge Package Reduces the Part Count by Half Facilitates Better PCB Layout Key Parameters Optimized for Class-D Audio Amplifier.

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DIGITAL AUDIO MOSFET Features IRFI4019HG-117P Key Parameters 150 80 13 4.1 2.5 150 PD - 96274 Ÿ Ÿ Ÿ Ÿ Ÿ Ÿ Ÿ Ÿ Ÿ Ÿ Integrated Half-Bridge Package Reduces the Part Count by Half Facilitates Better PCB Layout Key Parameters Optimized for Class-D Audio Amplifier Applications Low RDS(ON) for Improved Efficiency Low Qg and Qsw for Better THD and Improved Efficiency Low Qrr for Better THD and Lower EMI Can Delivery up to 200W per Channel into 8Ω Load in Half-Bridge Configuration Amplifier Lead-Free Package Halogen-Free VDS RDS(ON) typ. @ 10V Qg typ. Qsw typ. RG(int) typ.
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