IRFI4019HG-117P Datasheet | International Rectifier

Features Key Parameters 150 80 13 4.1 2.5 150 - 96274 Ÿ Ÿ Ÿ Ÿ Ÿ Ÿ Ÿ Ÿ Ÿ Ÿ Integrated Half-Bridge Package Reduces the Part Count by Half Facilitates Better PCB Layout Key Parameters Optimized for Class-D Audio Amplifier Applications Low RDS(ON) for Improved Efficiency Low Qg and Qsw for Better THD and Improved Efficiency Low Qrr for Better THD and Lower EMI Can Delivery up to 200W per Channel into 8Ω Load in Half-Bridge Configuration Amplifier Lead-Free Package Halogen-Free VDS RDS(ON) typ. @ 10V Qg typ. Qsw typ. RG(int) typ. TJ max h V m: n C n C Ω °C G1 S1/D2 G2 S2 D1 TO-220 Full-Pak 5 PIN G1, G2 D1, D2 S1, S2 Description Gate Drain Source This Digital Audio Mos FET Half-Bridge is specifically designed for Class D audio amplifier applications. It consists of two power Mos FET switches connected in half-bridge configuration. The latest process is used to achieve low on-resistance per silicon area. Furthermore, Gate charge, body-diode reverse recovery, and internal Gate resistance are optimized to improve key Class D audio amplifier performance factors such as efficiency, THD and EMI. These bine to make this Half-Bridge a highly efficient, robust and reliable device for Class D audio amplifier applications. Absolute Maximum Ratings h Parameter Max. 150 ±20 8.7 6.2 34 77 18 7.2 0.15 -55 to + 150 Units VDS VGS ID @ TC = 25°C ID @ TC = 100°C IDM EAS PD @TC = 25°C PD @TC = 100°C TJ TSTG Drain-to-Source Voltage Gate-to-Source Voltage Continuous Drain Current, VGS @ 10V Continuous Drain Current, VGS @ 10V Pulsed Drain Current c Single Pulse Avalanche Energy Power Dissipation f Power Dissipation f d m J W W/°C °C Linear Derating Factor Operating Junction and Storage Temperature Range Soldering Temperature, for 10 seconds (1.6mm from case) Mounting torque, 6-32 or M3 screw 300 10lb in (1.1N m) Thermal Resistance RθJC RθJA h x x Junction-to-Case f Parameter Typ. - - - - - - Max. 6.9 65 Units Junction-to-Ambient f Notes ...