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International Rectifier Electronic Components Datasheet

IRFI4020H-117P Datasheet

DIGITAL AUDIO MOSFET

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DIGITAL AUDIO MOSFET
PD - 97252
IRFI4020H-117P
Features
Ÿ Integrated half-bridge package
Ÿ Reduces the part count by half
Ÿ Facilitates better PCB layout
Ÿ Key parameters optimized for Class-D
audio amplifier applications
Ÿ Low RDS(ON) for improved efficiency
Ÿ Low Qg and Qsw for better THD and
improved efficiency
Ÿ Low Qrr for better THD and lower EMI
Ÿ Can delivery up to 300W per channel into
8load in half-bridge configuration
amplifier
Ÿ Lead-free package
gKey Parameters
VDS 200
RDS(ON) typ. @ 10V
80
Qg typ.
19
Qsw typ.
6.8
RG(int) typ.
3.0
TJ max
150
V
m:
nC
nC
°C
D1
G1
S1/D2
G2
S2
TO-220 Full-Pak 5 PIN
G1, G2
Gate
D1, D2
Drain
S1, S2
Source
Description
This Digital Audio MosFET Half-Bridge is specifically designed for Class D audio amplifier applications. It
consists of two power MosFET switches connected in half-bridge configuration. The latest process is used
to achieve low on-resistance per silicon area. Furthermore, Gate charge, body-diode reverse recovery,
and internal Gate resistance are optimized to improve key Class D audio amplifier performance factors
such as efficiency, THD and EMI. These combine to make this Half-Bridge a highly efficient, robust and
reliable device for Class D audio amplifier applications.
gAbsolute Maximum Ratings
Parameter
Max.
Units
VDS
VGS
ID @ TC = 25°C
ID @ TC = 100°C
IDM
PD @TC = 25°C
PD @TC = 100°C
Drain-to-Source Voltage
Gate-to-Source Voltage
Continuous Drain Current, VGS @ 10V
cContinuous Drain Current, VGS @ 10V
Pulsed Drain Current
fPower Dissipation
fPower Dissipation
200 V
±20
9.1 A
5.7
36
21 W
8.5
EAS
TJ
TSTG
dLinear Derating Factor
Single Pulse Avalanche Energy
Operating Junction and
Storage Temperature Range
0.17
130
-55 to + 150
W/°C
mJ
°C
Soldering Temperature, for 10 seconds
(1.6mm from case)
Mounting torque, 6-32 or M3 screw
gThermal Resistance
300
x x10lb in (1.1N m)
Parameter
fRθJC
Junction-to-Case
RθJA Junction-to-Ambient (free air)
Typ.
–––
–––
Max.
5.9
65
Units
°C/W
www.irf.com
1
08/22/06


International Rectifier Electronic Components Datasheet

IRFI4020H-117P Datasheet

DIGITAL AUDIO MOSFET

No Preview Available !

IRFI4020H-117P
gElectrical Characteristics @ TJ = 25°C (unless otherwise specified)
Parameter
Min. Typ. Max. Units
Conditions
BVDSS
∆ΒVDSS/TJ
RDS(on)
VGS(th)
VGS(th)/TJ
Drain-to-Source Breakdown Voltage
Breakdown Voltage Temp. Coefficient
Static Drain-to-Source On-Resistance
Gate Threshold Voltage
Gate Threshold Voltage Coefficient
200 ––– ––– V VGS = 0V, ID = 250µA
e––– 24 ––– mV/°C Reference to 25°C, ID = 1mA
––– 80 100 mVGS = 10V, ID = 5.5A
3.0 ––– 4.9
V VDS = VGS, ID = 100µA
––– -12 ––– mV/°C
IDSS
Drain-to-Source Leakage Current
––– ––– 20 µA VDS = 200V, VGS = 0V
––– ––– 250
VDS = 200V, VGS = 0V, TJ = 125°C
IGSS
Gate-to-Source Forward Leakage
––– ––– 100 nA VGS = 20V
Gate-to-Source Reverse Leakage
––– ––– -100
VGS = -20V
gfs Forward Transconductance
11 ––– ––– S VDS = 50V, ID = 5.5A
Qg Total Gate Charge
––– 19 29
Qgs1
Qgs2
Qgd
Qgodr
Pre-Vth Gate-to-Source Charge
Post-Vth Gate-to-Source Charge
Gate-to-Drain Charge
Gate Charge Overdrive
––– 4.9 –––
––– 0.95 –––
––– 5.8 –––
––– 7.4 –––
VDS = 100V
nC VGS = 10V
ID = 5.5A
See Fig. 6 and 15
Qsw Switch Charge (Qgs2 + Qgd)
––– 6.8 –––
RG(int)
td(on)
tr
td(off)
tf
Internal Gate Resistance
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
––– 3.0 –––
––– 8.4 –––
Ãe
VDD = 100V, VGS = 10V
––– 8.0 –––
ID = 5.5A
––– 18 ––– ns RG = 2.4
––– 4.0 –––
Ciss Input Capacitance
––– 1240 –––
VGS = 0V
Coss Output Capacitance
––– 130 ––– pF VDS = 25V
Crss
Reverse Transfer Capacitance
––– 28 –––
ƒ = 1.0MHz,
See Fig.5
Coss eff.
LD
Effective Output Capacitance
Internal Drain Inductance
––– 110 –––
––– 4.5 –––
VGS = 0V, VDS = 0V to 160V
Between lead,
D
nH 6mm (0.25in.)
LS Internal Source Inductance
––– 7.5 –––
from package
G
and center of die contact
S
gDiode Characteristics
Parameter
IS @ TC = 25°C Continuous Source Current
(Body Diode)
ISM Pulsed Source Current
Ù(Body Diode)
VSD Diode Forward Voltage
trr Reverse Recovery Time
Qrr Reverse Recovery Charge
Min.
–––
–––
–––
–––
–––
Typ.
–––
–––
–––
76
230
Max. Units
Conditions
9.1 MOSFET symbol
A showing the
36 integral reverse
ep-n junction diode.
1.3 V TJ = 25°C, IS = 5.5A, VGS = 0V
e110 ns TJ = 25°C, IF = 5.5A, VDD = 160V
350 nC di/dt = 100A/µs
Notes:
 Repetitive rating; pulse width limited by max. junction temperature.
‚ Starting TJ = 25°C, L = 8.6mH, RG = 25, IAS = 5.5A.
ƒ Pulse width 400µs; duty cycle 2%.
„ Rθ is measured at TJ of approximately 90°C.
… Specifications refer to single MosFET.
2 www.irf.com


Part Number IRFI4020H-117P
Description DIGITAL AUDIO MOSFET
Maker International Rectifier
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