IRFI4024H-117P Datasheet | International Rectifier

DIGITAL AUDIO MOSFET - 97254 Features Ÿ Ÿ Ÿ Ÿ Ÿ Ÿ Ÿ Ÿ Ÿ Integrated half-bridge package Reduces the part count by half Facilitates better PCB layout Key parameters optimized for Class-D audio amplifier applications Low RDS(ON) for improved efficiency Low Qg and Qsw for better THD and improved efficiency Low Qrr for better THD and lower EMI Can delivery up to 100W per channel into 6Ω load in full-bridge configuration amplifier Lead-free package VDS RDS(ON) typ. @ 10V Qg typ. Qsw typ. RG(int) typ. TJ max Key Parameters g 55 48 8.9 4.3 2.3 150 V m: n C n C Ω °C TO-220 Full-Pak 5 PIN G1, G2 D1, D2 S1, S2 Description Gate Drain Source This Digital Audio Mos FET Half-Bridge is specifically designed for Class D audio amplifier applications. It .. consists of two power Mos FET switches connected in half-bridge configuration. The latest process is used to achieve low on-resistance per silicon area. Furthermore, Gate charge, body-diode reverse recovery, and internal Gate resistance are optimized to improve key Class D audio amplifier performance factors such as efficiency, THD and EMI. These bine to make this Half-Bridge a highly efficient, robust and reliable device for Class D audio amplifier...