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International Rectifier Electronic Components Datasheet

IRFI4024H-117P Datasheet

DIGITAL AUDIO MOSFET

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DIGITAL AUDIO MOSFET
PD - 97254
IRFI4024H-117P
Features
Ÿ Integrated half-bridge package
Ÿ Reduces the part count by half
Ÿ Facilitates better PCB layout
Ÿ Key parameters optimized for Class-D
audio amplifier applications
Ÿ Low RDS(ON) for improved efficiency
Ÿ Low Qg and Qsw for better THD and
improved efficiency
Ÿ Low Qrr for better THD and lower EMI
Ÿ Can delivery up to 100W per channel into
6load in full-bridge configuration
amplifier
Ÿ Lead-free package
Key Parameters g
VDS 55
RDS(ON) typ. @ 10V
48
Qg typ.
8.9
Qsw typ.
4.3
RG(int) typ.
2.3
TJ max
150
V
m:
nC
nC
°C
TO-220 Full-Pak 5 PIN
G1, G2
D1, D2
S1, S2
Description
Gate
Drain
Source
This Digital Audio MosFET Half-Bridge is specifically designed for Class D audio amplifier applications. It
consists of two power MosFET switches connecwtwew.DdataiSnhehet4aU.lcfom-bridge configuration. The latest process is used
to achieve low on-resistance per silicon area. Furthermore, Gate charge, body-diode reverse recovery,
and internal Gate resistance are optimized to improve key Class D audio amplifier performance factors
such as efficiency, THD and EMI. These combine to make this Half-Bridge a highly efficient, robust and
reliable device for Class D audio amplifier applications.
Absolute Maximum Ratings g
Parameter
VDS
VGS
ID @ TC = 25°C
Drain-to-Source Voltage
Gate-to-Source Voltage
Continuous Drain Current, VGS @ 10V
ID @ TC = 100°C
IDM
PD @TC = 25°C
PD @TC = 100°C
Continuous Drain Current, VGS @ 10V
Pulsed Drain Current c
Power Dissipation
Power Dissipation
Linear Derating Factor
EAS Single Pulse Avalanche Energyd
TJ
TSTG
Operating Junction and
Storage Temperature Range
Soldering Temperature, for 10 seconds
Mounting torque, 6-32 or M3 screw
Thermal Resistance g
Parameter
RθJC
Junction-to-Case f
RθJA Junction-to-Ambient (free air)
Max.
55
±20
11
6.9
44
14
5.4
0.11
7.4
-55 to +150
300 (1.6mm from case)
10 lbf•in (1.1N•m)
Typ.
–––
–––
Max.
9.21
65
Units
V
A
W
W/°C
mJ
°C
Units
°C/W
www.irf.com
1
08/24/06


International Rectifier Electronic Components Datasheet

IRFI4024H-117P Datasheet

DIGITAL AUDIO MOSFET

No Preview Available !

IRFI4024H-117P
Electrical Characteristics @ TJ = 25°C (unless otherwise specified) g
Parameter
Min. Typ. Max. Units
Conditions
BVDSS
∆ΒVDSS/TJ
RDS(on)
VGS(th)
VGS(th)/TJ
IDSS
IGSS
gfs
Qg
Qgs1
Qgs2
Qgd
Qgodr
Drain-to-Source Breakdown Voltage
Breakdown Voltage Temp. Coefficient
Static Drain-to-Source On-Resistance
Gate Threshold Voltage
Gate Threshold Voltage Coefficient
Drain-to-Source Leakage Current
Gate-to-Source Forward Leakage
Gate-to-Source Reverse Leakage
Forward Transconductance
Total Gate Charge
Pre-Vth Gate-to-Source Charge
Post-Vth Gate-to-Source Charge
Gate-to-Drain Charge
Gate Charge Overdrive
55 ––– ––– V VGS = 0V, ID = 250µA
––– 54 ––– mV/°C Reference to 25°C, ID = 1mA
––– 48
60 mVGS = 10V, ID = 7.7A e
2.0 ––– 4.0
V VDS = VGS, ID = 25µA
––– -9.17 ––– mV/°C
––– ––– 20 µA VDS = 55V, VGS = 0V
––– ––– 250
VDS = 55V, VGS = 0V, TJ = 125°C
––– ––– 200 nA VGS = 20V
––– ––– -200
VGS = -20V
6.5 ––– ––– S VDS = 25V, ID = 7.7A
––– 8.9 13
––– 1.6 –––
––– 0.77 –––
––– 3.5 –––
––– 3.0 –––
VDS = 44V
nC VGS = 10V
ID = 7.7A
See Fig. 6 and 15
Qsw
RG(int)
td(on)
tr
td(off)
tf
Ciss
Coss
Crss
LD
Switch Charge (Qgs2 + Qgd)
Internal Gate Resistance
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Internal Drain Inductance
––– 4.3 –––
––– 2.3 –––
––– 5.9 –––
––– 2.0 –––
––– 13 –––
––– 3.4 –––
––– 320 –––
––– 47 –––
––– 31 –––
––– 4.5 –––
VDD = 28V, VGS = 10V e
ID = 7.7A
ns RG = 2.5
VGS = 0V
pF VDS = 50V
ƒ = 1.0MHz,
Between lead,
See Fig. 5
D
nH 6mm (0.25in.)
LS Internal Source Inductance
––– 7.5 –––
from package
G
and center of die contact
S
Diode Characteristics g
Parameter
IS @ TC = 25°C Continuous Source Current
(Body Diode)
ISM Pulsed Source Current
(Body Diode) c
VSD Diode Forward Voltage
trr Reverse Recovery Time
Qrr Reverse Recovery Charge
Min.
–––
–––
–––
–––
–––
Typ.
–––
–––
–––
17
11
Max. Units
Conditions
11 MOSFET symbol
D
A showing the
44
integral reverse
G
p-n junction diode.
S
1.3 V TJ = 25°C, IS = 7.7A, VGS = 0V e
26 ns TJ = 25°C, IF = 7.7A
17 nC di/dt = 100A/µs e
Notes:
 Repetitive rating; pulse width limited by max. junction temperature.
‚ Starting TJ = 25°C, L = 0.25mH, RG = 25, IAS = 7.7A.
ƒ Pulse width 400µs; duty cycle 2%.
„ Rθ is measured at TJ of approximately 90°C.
… Specifications refer to single MosFET.
2
www.irf.com


Part Number IRFI4024H-117P
Description DIGITAL AUDIO MOSFET
Maker International Rectifier
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