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International Rectifier Electronic Components Datasheet

IRFI4212H-117P Datasheet

Digital Audio MOSFET

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DIGITAL AUDIO MOSFET
PD - 97249A
IRFI4212H-117P
Features
Ÿ Integrated half-bridge package
Ÿ Reduces the part count by half
Ÿ Facilitates better PCB layout
Ÿ Key parameters optimized for Class-D
audio amplifier applications
Ÿ Low RDS(ON) for improved efficiency
Ÿ Low Qg and Qsw for better THD and
improved efficiency
Ÿ Low Qrr for better THD and lower EMI
Ÿ Can delivery up to 150W per channel into
4load in half-bridge configuration
amplifier
Ÿ Lead-free package
Key Parameters g
VDS 100
RDS(ON) typ. @ 10V
58
Qg typ.
12
Qsw typ.
6.9
RG(int) typ.
3.4
TJ max
150
V
m:
nC
nC
°C
TO-220 Full-Pak 5 PIN
Description
G1, G2
Gate
D1, D2
Drain
S1, S2
Source
This Digital Audio MosFET Half-Bridge is specifically designed for Class D audio amplifier applications. It
consists of two power MosFET switches connected in half-bridge configuration. The latest process is used
to achieve low on-resistance per silicon area. Furthermore, Gate charge, body-diode reverse recovery,
and internal Gate resistance are optimized to improve key Class D audio amplifier performance factors
such as efficiency, THD and EMI. These combine to make this Half-Bridge a highly efficient, robust and
reliable device for Class D audio amplifier applications.
Absolute Maximum Ratings g
Parameter
VDS Drain-to-Source Voltage
VGS Gate-to-Source Voltage
ID @ TC = 25°C
Continuous Drain Current, VGS @ 10V
ID @ TC = 100°C
IDM
PD @TC = 25°C
PD @TC = 100°C
Continuous Drain Current, VGS @ 10V
Pulsed Drain Current c
Power Dissipation f
Power Dissipation f
Max.
100
±20
11
6.8
44
18
7.0
Units
V
A
W
EAS
TJ
TSTG
Linear Derating Factor
Single Pulse Avalanche Energyd
Operating Junction and
Storage Temperature Range
Soldering Temperature, for 10 seconds
(1.6mm from case)
0.14
41
-55 to + 150
300
W/°C
mJ
°C
Mounting torque, 6-32 or M3 screw
10lbxin (1.1Nxm)
Thermal Resistance g
Parameter
RθJC
Junction-to-Case f
RθJA Junction-to-Ambient (free air)
Typ.
–––
–––
Max.
7.1
65
Units
°C/W
www.irf.com
1
08/21/06


International Rectifier Electronic Components Datasheet

IRFI4212H-117P Datasheet

Digital Audio MOSFET

No Preview Available !

IRFI4212H-117P
Electrical Characteristics @ TJ = 25°C (unless otherwise specified) g
Parameter
Min. Typ. Max. Units
Conditions
BVDSS
∆ΒVDSS/TJ
RDS(on)
VGS(th)
VGS(th)/TJ
Drain-to-Source Breakdown Voltage
Breakdown Voltage Temp. Coefficient
Static Drain-to-Source On-Resistance
Gate Threshold Voltage
Gate Threshold Voltage Coefficient
100 ––– ––– V VGS = 0V, ID = 250µA
––– 0.09 ––– V/°C Reference to 25°C, ID = 1mA
––– 58 72.5 mVGS = 10V, ID = 6.6A e
3.0 ––– 5.0
V VDS = VGS, ID = 250µA
––– -11 ––– mV/°C
IDSS
Drain-to-Source Leakage Current
––– ––– 20 µA VDS = 100V, VGS = 0V
––– ––– 250
VDS = 100V, VGS = 0V, TJ = 125°C
IGSS
Gate-to-Source Forward Leakage
––– ––– 200 nA VGS = 20V
Gate-to-Source Reverse Leakage
––– ––– -200
VGS = -20V
gfs Forward Transconductance
11 ––– ––– S VDS = 50V, ID = 6.6A
Qg Total Gate Charge
––– 12 18
Qgs1
Qgs2
Qgd
Qgodr
Pre-Vth Gate-to-Source Charge
Post-Vth Gate-to-Source Charge
Gate-to-Drain Charge
Gate Charge Overdrive
––– 1.6 –––
––– 0.71 –––
––– 6.2 –––
––– 3.5 –––
VDS = 80V
nC VGS = 10V
ID = 6.6A
See Fig. 6 and 15
Qsw Switch Charge (Qgs2 + Qgd)
––– 6.9 –––
RG(int)
Internal Gate Resistance
––– 3.4 –––
td(on)
Turn-On Delay Time
tr Rise Time
td(off)
Turn-Off Delay Time
tf Fall Time
––– 4.7 –––
VDD = 50V, VGS = 10V e
––– 8.3 –––
ID = 6.6A
––– 9.5 ––– ns RG = 2.5
––– 4.3 –––
Ciss Input Capacitance
––– 490 –––
VGS = 0V
Coss Output Capacitance
––– 64 ––– pF VDS = 50V
Crss
Reverse Transfer Capacitance
––– 34 –––
ƒ = 1.0MHz,
See Fig.5
Coss eff.
LD
Effective Output Capacitance
Internal Drain Inductance
––– 110 –––
––– 4.5 –––
VGS = 0V, VDS = 0V to 80V
Between lead,
D
nH 6mm (0.25in.)
LS Internal Source Inductance
––– 7.5 –––
from package
G
and center of die contact
S
Diode Characteristics g
Parameter
IS @ TC = 25°C Continuous Source Current
(Body Diode)
ISM Pulsed Source Current
(Body Diode) c
VSD Diode Forward Voltage
trr Reverse Recovery Time
Qrr Reverse Recovery Charge
Min.
–––
–––
–––
–––
–––
Typ.
–––
–––
–––
36
56
Max. Units
Conditions
11 MOSFET symbol
A showing the
44 integral reverse
p-n junction diode.
1.3 V TJ = 25°C, IS = 6.6A, VGS = 0V e
54 ns TJ = 25°C, IF = 6.6A
84 nC di/dt = 100A/µs e
Notes:
 Repetitive rating; pulse width limited by max. junction temperature.
‚ Starting TJ = 25°C, L = 1.9mH, RG = 25, IAS = 6.6A.
ƒ Pulse width 400µs; duty cycle 2%.
„ Rθ is measured at TJ of approximately 90°C.
… Specifications refer to single MosFET.
2 www.irf.com


Part Number IRFI4212H-117P
Description Digital Audio MOSFET
Maker International Rectifier
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