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International Rectifier Electronic Components Datasheet

IRFI4227PBF Datasheet

HEXFET Power MOSFET

No Preview Available !

PDP SWITCH
PD - 97036A
IRFI4227PbF
Features
l Advanced Process Technology
l Key Parameters Optimized for PDP Sustain,
Energy Recovery and Pass Switch Applications
l Low EPULSE Rating to Reduce Power
Dissipation in PDP Sustain, Energy Recovery
and Pass Switch Applications
l Low QG for Fast Response
l High Repetitive Peak Current Capability for
Reliable Operation
l Short Fall & Rise Times for Fast Switching
l150°C Operating Junction Temperature for
Improved Ruggedness
l Repetitive Avalanche Capability for Robustness
and Reliability
Key Parameters
VDS max
200
VDS (Avalanche) typ.
240
RDS(ON) typ. @ 10V
21
IRP max @ TC= 100°C
TJ max
47
150
DD
V
V
m:
A
°C
G
S
D
G
S TO-220AB Full-Pak
GDS
Gate
Drain
Source
Description
This HEXFET® Power MOSFET is specifically designed for Sustain; Energy Recovery & Pass switch
applications in Plasma Display Panels. This MOSFET utilizes the latest processing techniques to achieve
low on-resistance per silicon area and low EPULSE rating. Additional features of this MOSFET are 150°C
operating junction temperature and high repetitive peak current capability. These features combine to
make this MOSFET a highly efficient, robust and reliable device for PDP driving applications.
Absolute Maximum Ratings
Parameter
VGS
ID @ TC = 25°C
ID @ TC = 100°C
IDM
IRP @ TC = 100°C
PD @TC = 25°C
PD @TC = 100°C
Gate-to-Source Voltage
Continuous Drain Current, VGS @ 10V
Continuous Drain Current, VGS @ 10V
Pulsed Drain Current c
Repetitive Peak Current g
Power Dissipation
Power Dissipation
Linear Derating Factor
TJ
TSTG
Operating Junction and
Storage Temperature Range
Soldering Temperature for 10 seconds
Mounting Torque, 6-32 or M3 Screw
Thermal Resistance
Parameter
RθJC
RθJA
Junction-to-Case f
Junction-to-Ambient f
Notes  through … are on page 8
www.irf.com
Max.
±30
26
17
100
47
46
18
0.37
-40 to + 150
300
10lbxin (1.1Nxm)
Typ.
–––
–––
Max.
2.73
65
Units
V
A
W
W/°C
°C
N
Units
1
10/12/05


International Rectifier Electronic Components Datasheet

IRFI4227PBF Datasheet

HEXFET Power MOSFET

No Preview Available !

IRFI4227PbF
Electrical Characteristics @ TJ = 25°C (unless otherwise specified)
Parameter
Min. Typ. Max. Units
Conditions
BVDSS
Drain-to-Source Breakdown Voltage
200 ––– ––– V VGS = 0V, ID = 250µA
∆ΒVDSS/TJ
Breakdown Voltage Temp. Coefficient ––– 240 ––– mV/°C Reference to 25°C, ID = 1mA
RDS(on)
Static Drain-to-Source On-Resistance ––– 21 25 mVGS = 10V, ID = 17A e
VGS(th)
Gate Threshold Voltage
3.0 ––– 5.0
V VDS = VGS, ID = 250µA
VGS(th)/TJ
Gate Threshold Voltage Coefficient
––– 11 ––– mV/°C
IDSS
Drain-to-Source Leakage Current
––– ––– 20 µA VDS = 200V, VGS = 0V
––– ––– 1.0 mA VDS = 200V, VGS = 0V, TJ = 125°C
IGSS
Gate-to-Source Forward Leakage
––– ––– 100 nA VGS = 20V
Gate-to-Source Reverse Leakage
––– ––– -100
VGS = -20V
gfs Forward Transconductance
47 ––– ––– S VDS = 25V, ID = 17A
Qg Total Gate Charge
––– 73 110 nC VDD = 100V, ID = 17A, VGS = 10Ve
Qgd Gate-to-Drain Charge
––– 21 –––
tst
Shoot Through Blocking Time
100 ––– ––– ns VDD = 160V, VGS = 15V, RG= 4.7
EPULSE
Energy per Pulse
––– 570 –––
L = 220nH, C= 0.4µF, VGS = 15V
µJ VDS = 160V, RG= 4.7Ω, TJ = 25°C
––– 910 –––
L = 220nH, C= 0.4µF, VGS = 15V
VDS = 160V, RG= 4.7Ω, TJ = 100°C
Ciss Input Capacitance
––– 4600 –––
VGS = 0V
Coss Output Capacitance
––– 460 ––– pF VDS = 25V
Crss
Reverse Transfer Capacitance
––– 91 –––
ƒ = 1.0MHz,
Coss eff.
Effective Output Capacitance
––– 360 –––
VGS = 0V, VDS = 0V to 160V
LD Internal Drain Inductance
––– 4.5 –––
Between lead,
D
nH 6mm (0.25in.)
LS Internal Source Inductance
––– 7.5 –––
from package
and center of die contact
G
S
Avalanche Characteristics
Parameter
EAS
EAR
VDS(Avalanche)
IAS
Single Pulse Avalanche Energyd
Repetitive Avalanche Energy c
Repetitive Avalanche Voltage c
Avalanche Current d
Diode Characteristics
Parameter
IS @ TC = 25°C Continuous Source Current
(Body Diode)
ISM Pulsed Source Current
(Body Diode) c
VSD Diode Forward Voltage
trr Reverse Recovery Time
Qrr Reverse Recovery Charge
Typ.
Max.
Units
––– 54 mJ
––– 4.6 mJ
240 ––– V
––– 16 A
Min.
–––
–––
–––
–––
–––
Typ.
–––
–––
–––
93
350
Max. Units
Conditions
26 MOSFET symbol
A showing the
100 integral reverse
p-n junction diode.
1.3 V TJ = 25°C, IS = 17A, VGS = 0V e
140 ns TJ = 25°C, IF = 17A, VDD = 50V
520 nC di/dt = 100A/µs e
2 www.irf.com


Part Number IRFI4227PBF
Description HEXFET Power MOSFET
Maker International Rectifier
Total Page 8 Pages
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