IRFI4229PbF
Overview
- Advanced Process Technology
- Key Parameters Optimized for PDP Sustain, Energy Recovery and Pass Switch Applications
- Low EPULSE Rating to Reduce Power Dissipation in PDP Sustain, Energy Recovery and Pass Switch Applications
- Low QG for Fast Response
- High Repetitive Peak Current Capability for Reliable Operation
- Short Fall & Rise Times for Fast Switching
- 150°C Operating Junction Temperature for Improved Ruggedness
- Repetitive Avalanche Capability for Robustness and Reliability IRFI4229PbF HEXFET® Power MOSFET Key Parameters VDS max 250 V VDS (Avalanche) typ. 300 V RDS(ON) typ. @ 10V 38 m IRP max @ TC= 100°C 32 A TJ max 150 °C G Gate S
- G TO-220 Full-Pak
- Drain S Source
