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IRFI4229 - Power MOSFET

Download the IRFI4229 datasheet PDF. This datasheet also covers the IRFI4229PbF variant, as both devices belong to the same power mosfet family and are provided as variant models within a single manufacturer datasheet.

General Description

This HEXFET® Power MOSFET is specifically designed for Sustain; Energy Recovery & Pass switch applications in Plasma Display Panels.

This MOSFET utilizes the latest processing techniques to achieve low on-resistance per silicon area and low EPULSE rating.

Key Features

  • Advanced Process Technology.
  • Key Parameters Optimized for PDP Sustain, Energy Recovery and Pass Switch.

📥 Download Datasheet

Note: The manufacturer provides a single datasheet file (IRFI4229PbF-Infineon.pdf) that lists specifications for multiple related part numbers.

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

View original datasheet text
Features  Advanced Process Technology  Key Parameters Optimized for PDP Sustain, Energy Recovery and Pass Switch Applications  Low EPULSE Rating to Reduce Power Dissipation in PDP Sustain, Energy Recovery and Pass Switch Applications  Low QG for Fast Response  High Repetitive Peak Current Capability for Reliable Operation  Short Fall & Rise Times for Fast Switching  150°C Operating Junction Temperature for Improved Ruggedness  Repetitive Avalanche Capability for Robustness and Reliability IRFI4229PbF HEXFET® Power MOSFET Key Parameters VDS max 250 V VDS (Avalanche) typ. 300 V RDS(ON) typ.