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International Rectifier Electronic Components Datasheet

IRFI4228PbF Datasheet

Power MOSFET

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PD - 97228
PDP SWITCH
IRFI4228PbF
Features
l Advanced Process Technology
l Key Parameters Optimized for PDP Sustain,
Energy Recovery and Pass Switch Applications
l Low EPULSE Rating to Reduce Power
Dissipation in PDP Sustain, Energy Recovery
and Pass Switch Applications
l Low QG for Fast Response
l High Repetitive Peak Current Capability for
Reliable Operation
l Short Fall & Rise Times for Fast Switching
l150°C Operating Junction Temperature for
Improved Ruggedness
l Repetitive Avalanche Capability for Robustness
and Reliability
Key Parameters
VDS max
150
V
VDS (Avalanche) typ.
RDS(ON) typ. @ 10V
180
V
12.2
m:
IRP max @ TC= 100°C
61
A
TJ max
150
°C
D
D
G
S
D
G
S
TO-220AB Full-Pak
G
Gate
D
Drain
S
Source
Description
This HEXFET® Power MOSFET is specifically designed for Sustain; Energy Recovery & Pass switch
applications in Plasma Display Panels. This MOSFET utilizes the latest processing techniques to achieve
low on-resistance per silicon area and low EPULSE rating. Additional features of this MOSFET are 150°C
operating junction temperature and high repetitive peak current capability. These features combine to
make this MOSFET a highly efficient, robust and reliable device for PDP driving applications.
Absolute Maximum Ratings
Parameter
VGS
ID @ TC = 25°C
ID @ TC = 100°C
IDM
IRP @ TC = 100°C
PD @TC = 25°C
PD @TC = 100°C
Gate-to-Source Voltage
Continuous Drain Current, VGS @ 10V
Continuous Drain Current, VGS @ 10V
Pulsed Drain Current c
Repetitive Peak Current g
Power Dissipation
Power Dissipation
Linear Derating Factor
TJ
TSTG
Operating Junction and
Storage Temperature Range
Soldering Temperature for 10 seconds
Mounting Torque, 6-32 or M3 Screw
Thermal Resistance
Parameter
RθJC
Junction-to-Case f
RθJA
Junction-to-Ambient f
Notes  through … are on page 8
www.irf.com
Max.
±30
34
21
130
61
46
18
0.37
-40 to + 150
300
10lbxin (1.1Nxm)
Typ.
–––
–––
Max.
2.73
65
Units
V
A
W
W/°C
°C
N
Units
°C/W
1
06/26/06


International Rectifier Electronic Components Datasheet

IRFI4228PbF Datasheet

Power MOSFET

No Preview Available !

IRFI4228PbF
Electrical Characteristics @ TJ = 25°C (unless otherwise specified)
Parameter
Min. Typ. Max. Units
Conditions
BVDSS
Drain-to-Source Breakdown Voltage
150 ––– ––– V VGS = 0V, ID = 250µA
∆ΒVDSS/TJ
RDS(on)
Breakdown Voltage Temp. Coefficient
Static Drain-to-Source On-Resistance
––– 190 ––– mV/°C Reference to 25°C, ID = 1mA
––– 12.2 16 mVGS = 10V, ID = 20A e
VGS(th)
Gate Threshold Voltage
3.0 ––– 5.0
V VDS = VGS, ID = 250µA
VGS(th)/TJ
Gate Threshold Voltage Coefficient
––– -12 ––– mV/°C
IDSS
Drain-to-Source Leakage Current
––– ––– 20 µA VDS = 150V, VGS = 0V
––– ––– 1.0 mA VDS = 150V, VGS = 0V, TJ = 125°C
IGSS
Gate-to-Source Forward Leakage
––– ––– 100 nA VGS = 20V
Gate-to-Source Reverse Leakage
––– ––– -100
VGS = -20V
gfs
Forward Transconductance
64 ––– ––– S VDS = 25V, ID = 20A
Qg
Total Gate Charge
––– 73 110 nC VDD = 75V, ID = 20A, VGS = 10Ve
Qgd
Gate-to-Drain Charge
––– 20 –––
tst
Shoot Through Blocking Time
100 ––– ––– ns VDD = 120V, VGS = 15V, RG= 5.1
EPULSE
Energy per Pulse
––– 62 –––
L = 220nH, C= 0.3µF, VGS = 15V
µJ VDS = 120V, RG= 5.1Ω, TJ = 25°C
––– 110 –––
L = 220nH, C= 0.3µF, VGS = 15V
VDS = 120V, RG= 5.1Ω, TJ = 100°C
Ciss
Input Capacitance
––– 4560 –––
VGS = 0V
Coss
Output Capacitance
––– 560 ––– pF VDS = 25V
Crss
Reverse Transfer Capacitance
––– 110 –––
ƒ = 1.0MHz
Coss eff.
Effective Output Capacitance
––– 460 –––
VGS = 0V, VDS = 0V to 120V
LD
Internal Drain Inductance
––– 4.5 –––
Between lead,
D
nH 6mm (0.25in.)
LS
Internal Source Inductance
––– 7.5 –––
from package
G
and center of die contact
S
Avalanche Characteristics
Parameter
EAS
EAR
VDS(Avalanche)
Single Pulse Avalanche Energyd
Repetitive Avalanche Energy c
Repetitive Avalanche Voltage c
IAS
Avalanche Current d
Typ.
Max.
Units
–––
170
mJ
–––
4.6
mJ
180
–––
V
–––
20
A
Diode Characteristics
Parameter
IS @ TC = 25°C Continuous Source Current
(Body Diode)
ISM
Pulsed Source Current
(Body Diode) c
VSD
Diode Forward Voltage
trr
Reverse Recovery Time
Qrr
Reverse Recovery Charge
Min.
–––
–––
–––
–––
–––
Typ.
–––
–––
–––
74
230
Max. Units
Conditions
34
MOSFET symbol
A showing the
130
integral reverse
p-n junction diode.
1.3
V TJ = 25°C, IS = 20A, VGS = 0V e
110 ns TJ = 25°C, IF = 20A, VDD = 50V
350 nC di/dt = 100A/µs e
2
www.irf.com


Part Number IRFI4228PbF
Description Power MOSFET
Maker International Rectifier
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IRFI4228PbF Datasheet PDF






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