IRFI4228PbF
Features l Advanced Process Technology l Key Parameters Optimized for PDP Sustain,
Energy Recovery and Pass Switch Applications l Low EPULSE Rating to Reduce Power
Dissipation in PDP Sustain, Energy Recovery and Pass Switch Applications l Low QG for Fast Response l High Repetitive Peak Current Capability for Reliable Operation l Short Fall & Rise Times for Fast Switching l150°C Operating Junction Temperature for Improved Ruggedness l Repetitive Avalanche Capability for Robustness and Reliability
Key Parameters
VDS max
VDS (Avalanche) typ. RDS(ON) typ. @ 10V
12.2 m:
IRP max @ TC= 100°C
TJ max
°C
TO-220AB Full-Pak
G Gate
D Drain
S Source
Description
This HEXFET® Power MOSFET is specifically designed for Sustain; Energy Recovery & Pass switch applications in Plasma Display Panels. This MOSFET utilizes the latest processing techniques to achieve low on-resistance per silicon area and low EPULSE rating. Additional features of...
