Description
Fifth Generation HEXFETs from International Rectifier utilize advanced processing techniques to achieve the lowest possible on-resistance per silicon area.
Features
- 15 (.045) M IN . 1 2 3
NOTES: 1 D IME N S IO N IN G & TO LE R A N C IN G P E R A N S I Y 14.5M , 1982 2 C O N TR O LLIN G D IM E N S IO N : IN C H . 3.30 (.130) 3.10 (.122) -B13.70 (.540) 13.50 (.530) C D
A 1.40 (.055) 3X 1.05 (.042) 2.54 (.100) 2X 0.90 (.035) 3X 0.70 (.028) 0.25 (.010) M A M B 3X 0.48 (.019) 0.44 (.017)
B
2.85 (.112) 2.65 (.104)
M IN IM U M C R E E P A G E D IS TA N C E B E TW E E N A -B -C -D = 4.80 (.189)
Part Marking Information
TO-220 FullPak
E X A M P L E : T H IS I.
IRFI530N_InternationalRectifier.pdf
