IRFI530G
IRFI530G is Power MOSFET manufactured by Vishay.
Power MOSFET
IRFI530G, SiHFI530G
Vishay Siliconix
PRODUCT SUMMARY
VDS (V) RDS(on) (Ω) Qg (Max.) (nC) Qgs (nC) Qgd (nC) Configuration
100 VGS = 10 V
33 5.4 15 Single
TO-220 FULLPAK
S N-Channel MOSFET
ORDERING INFORMATION
Package Lead (Pb)-free
SnPb
Features
- Isolated Package
- High Voltage Isolation = 2.5 kVRMS (t = 60 s; f = 60 Hz)
- Sink to Lead Creepage Distance = 4.8 mm
- 175 °C Operating Temperature
- Dynamic dV/dt Rating
- Low Thermal Resistance
- Lead (Pb)-free Available
Available
RoHS-
PLIANT
DESCRIPTION
Third generation Power MOSFETs from Vishay provide the designer with the best bination of fast switching, ruggedized device design, low...
