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IRFI530G

Manufacturer: Vishay
IRFI530G datasheet preview

Datasheet Details

Part number IRFI530G
Datasheet IRFI530G-Vishay.pdf
File Size 667.12 KB
Manufacturer Vishay
Description Power MOSFET
IRFI530G page 2 IRFI530G page 3

IRFI530G Overview

Third generation Power MOSFETs from Vishay provide the designer with the best bination of fast switching, ruggedized device design, low on-resistance and cost-effectiveness. The TO-220 FULLPAK eliminates the need for additional insulating hardware in mercial-industrial applications. The molding pound used provides a high isolation capability and a low between the tab and external heatsink.

IRFI530G Key Features

  • Isolated Package
  • High Voltage Isolation = 2.5 kVRMS (t = 60 s
  • Sink to Lead Creepage Distance = 4.8 mm
  • 175 °C Operating Temperature
  • Dynamic dV/dt Rating
  • Low Thermal Resistance
  • Lead (Pb)-free Available

IRFI530G from other manufacturers

See all manufacturers

Brand Logo Part Number Description Other Manufacturers
International Rectifier Logo IRFI530G HEXFET Power MOSFET International Rectifier
INCHANGE Logo IRFI530G N-Channel MOSFET INCHANGE
Fairchild Semiconductor Logo IRFI530A Advanced Power MOSFET Fairchild Semiconductor
International Rectifier Logo IRFI530N HEXFET Power MOSFET International Rectifier
International Rectifier Logo IRFI530NPBF Power MOSFET International Rectifier
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IRFI530G Distributor

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