| Part Number | IRFI530G Datasheet |
|---|---|
| Manufacturer | International Rectifier |
| Overview | . . |
IRFI530G Datasheet and Specifications PDF
The IRFI530G is a HEXFET Power MOSFET.
Key Specifications
| Package | TO-220-3 |
|---|---|
| Mount Type | Through Hole |
| Pins | 3 |
| Height | 9.8 mm |
| Length | 10.63 mm |
| Width | 4.83 mm |
| Max Operating Temp | 175 °C |
| Min Operating Temp | -55 °C |
| Part Number | IRFI530G Datasheet |
|---|---|
| Description | Power MOSFET |
| Manufacturer | Vishay |
| Overview |
Third generation Power MOSFETs from Vishay provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effectiveness. The TO-220 FULLPAK elim.
* Isolated Package * High Voltage Isolation = 2.5 kVRMS (t = 60 s; f = 60 Hz) * Sink to Lead Creepage Distance = 4.8 mm * 175 °C Operating Temperature * Dynamic dV/dt Rating * Low Thermal Resistance * Lead (Pb)-free Available Available RoHS* COMPLIANT DESCRIPTION Third generation Power MOSFETs fro. |
| Part Number | IRFI530G Datasheet |
|---|---|
| Description | N-Channel MOSFET |
| Manufacturer | Inchange Semiconductor |
| Overview |
iscN-Channel MOSFET Transistor
·FEATURES ·Low drain-source on-resistance:
RDS(ON) =0.16Ω (MAX) ·Enhancement mode:
Vth = 2 to 4V (VDS = 10 V, ID=0.25mA) ·100% avalanche tested ·Minimum Lot-to-Lot vari.
*Low drain-source on-resistance: RDS(ON) =0.16Ω (MAX) *Enhancement mode: Vth = 2 to 4V (VDS = 10 V, ID=0.25mA) *100% avalanche tested *Minimum Lot-to-Lot variations for robust device performance and reliable operation *DESCRITION *Switching Voltage Regulators *ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYM. |