IRFI530NPBF Datasheet | International Rectifier

Description Fifth Generation HEXFETs from International Rectifier utilize advanced processing techniques to achieve the lowest possible on-resistance per silicon area. This benefit, bined with the fast switching speed and ruggedized device design that HEXFET Power MOSFETs are well known for, provides the designer with an extremely efficient device for use in a wide variety of applications. The TO-220 Fullpak eliminates the need for additional insulating hardware in mercial-industrial applications. The moulding pound used provides a high isolation capability and a low thermal resistance between the tab and external heatsink. This isolation is equivalent to using a 100 micron mica barrier with standard TO-220 product. The Fullpak is mounted to a heatsink using a single clip or by a single screw fixing. Absolute Maximum Ratings Parameter ID @ TC = 25°C Continuous Drain Current, VGS @ 10V ID @ TC = 100°C IDM PD @TC = 25°C Continuous Drain Current, VGS @ 10V Pulsed Drain Current † Power Dissipation Linear Derating Factor VGS Gate-to-Source Voltage EAS Single Pulse Avalanche Energy ‚† IAR Avalanche Current† EAR dv/dt Repetitive Avalanche Current Peak Diode Recovery dv/dt - † TJ Operating Junction and TSTG Storage Temperature Range Soldering Temperature, for 10 seconds Mounting torque, 6-32 or M3 screw. Thermal Resistance Parameter RθJC RθJA Junction-to-Case Junction-to-Ambient - 95419 IRFI530NPb F VDSS = 100V G RDS(on) = 0.11Ω S ID = 12A TO-220 FULLPAK Max. 12 8.6 60 41 0.27 ±20 150 9.0 4.1 5.0 -55 to + 175 300 (1.6mm from case) 10 lbf•in (1.1N•m) Min. –––– –––– Typ. –––– –––– Max. 3.7...