IRFIZ34EPBF Datasheet - International Rectifier

HEXFET Power MOSFET

IRFIZ34EPBF General Description

Fifth Generation HEXFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET Power MOSFETs are well known for, provides the designer .

IRFIZ34EPBF Datasheet (264.98 KB)

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IRFIZ34EPBF

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International Rectifier

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264.98 KB

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Hexfet power mosfet.
PD - 94839 IRFIZ34EPbF l l l l l l Advanced Process Technology Isolated Package High Voltage Isolation = 2.5KVRMS Sink to Lead Creepage Dist. = 4..

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IRFIZ34EPBF HEXFET Power MOSFET International Rectifier

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IRFIZ34EPBF General Description

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