IRFIZ34NPBF Datasheet - International Rectifier

Power MOSFET

IRFIZ34NPBF General Description

Fifth Generation HEXFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET Power MOSFETs are well known for, provides the designer .

IRFIZ34NPBF Datasheet (262.94 KB)

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IRFIZ34NPBF

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International Rectifier

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262.94 KB

Description:

Power mosfet.
l Advanced Process Technology l Isolated Package l High Voltage Isolation = 2.5KVRMS l Sink to Lead Creepage Dist. = 4.8mm l Fully Avalanche Rated l.

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IRFIZ34NPBF Power MOSFET International Rectifier

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IRFIZ34NPBF General Description

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