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IRFIZ34VPBF Datasheet HEXFET Power MOSFET

Manufacturer: International Rectifier (now Infineon)

General Description

l HEXFET® Power MOSFET D VDSS = 60V RDS(on) = 28mΩ G S ID = 20A Advanced HEXFET® Power MOSFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area.

This benefit, combined with the fast switching speed and ruggedized device design that HEXFET power MOSFETs are well known for, provides the designer with an extremely efficient and reliable device for use in a wide variety of applications.

The TO-220 Fullpak eliminates the need for additional insulating hardware in commercial-industrial applications.

Overview

PD - 94841 IRFIZ34VPbF Advanced Process Technology l Ultra Low On-Resistance l Dynamic dv/dt Rating l 175°C Operating Temperature l Fast Switching l Fully Avalanche Rated l Optimized for SMPS Applications l.

Key Features

  • es "L ead-F ree" D AT E CO D E Y E AR 9 = 1 9 9 9 W E E K 24 L IN E K Data and specifications subject to change without notice. This product has been designed and qualified for the industrial market. Qualification Standards can be found on IR’s Web site. IR WORLD.