IRFIZ46NPBF Datasheet - International Rectifier

Power MOSFET

IRFIZ46NPBF General Description

Fifth Generation HEXFETs from International Rectifier utilize advanced processing techniques to achieve the lowest possible on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET Power MOSFETs are well known for, provides the des.

IRFIZ46NPBF Datasheet (217.30 KB)

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IRFIZ46NPBF

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International Rectifier

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217.30 KB

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Power mosfet.
l Advanced Process Technology l Isolated Package l High Voltage Isolation = 2.5KVRMS l Sink to Lead Creepage Dist. = 4.8mm l Fully Avalanche Rated l.

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IRFIZ46NPBF Power MOSFET International Rectifier

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IRFIZ46NPBF General Description

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