IRFL4105PbF Datasheet - International Rectifier

HEXFET Power MOSFET

IRFL4105PbF Features

* . DIMENSION MEASURED @ HUB. 4. INCLUDES FLANGE DISTORTION @ OUTER EDGE. 18.40 (.724) MAX. 14.40 (.566) 12.40 (.488) 4 3 Data and specifications subject to change without notice. IR WORLD HEADQUARTERS: 233 Kansas St., El Segundo, California 90245, USA Tel: (310) 252-7105 TAC Fax: (310) 252-7903

IRFL4105PbF General Description

Fifth Generation HEXFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET Power MOSFETs are well known for, provides the designer .

IRFL4105PbF Datasheet (163.88 KB)

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IRFL4105PbF

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International Rectifier

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163.88 KB

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Hexfet power mosfet.
PD- 95319 IRFL4105PbF HEXFET® Power MOSFET Surface Mount Advanced Process Technology Ultra Low On-Resistance Dynamic dv/dt Rating Fast Switching Full.

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IRFL4105PbF HEXFET Power MOSFET International Rectifier

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IRFL4105PbF Features

IRFL4105PbF General Description

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