Datasheet4U Logo Datasheet4U.com

IRFP1405PBF - Power MOSFET

Description

This HEXFET® Power MOSFET utilizes the latest processing techniques to achieve extremely low on-resistance per silicon area.

Features

  • l Advanced Process Technology l Ultra Low On-Resistance l 175°C Operating Temperature l Fast Switching l Repetitive Avalanche Allowed up to Tjmax l Lead-Free.

📥 Download Datasheet

📁 Similar Datasheet

Part Number Description Manufacturer
IRFP1405 N-Channel MOSFET INCHANGE
IRFP140 Power MOSFET Vishay
IRFP140 N-channel Power MOSFET Fairchild Semiconductor
IRFP140 N-Channel MOSFET INCHANGE
IRFP140A Advanced Power MOSFET Fairchild Semiconductor

Other Datasheets by International Rectifier (now Infineon)

Part Number Description
IRFP1405 AUTOMOTIVE MOSFET
IRFP140 Power MOSFET
IRFP140N Power MOSFET
IRFP140NPBF HEXFET Power MOSFET
IRFP140PBF Preferred for commercail-industrial applications

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

View original datasheet text
PD - 95509A IRFP1405PbF Features l Advanced Process Technology l Ultra Low On-Resistance l 175°C Operating Temperature l Fast Switching l Repetitive Avalanche Allowed up to Tjmax l Lead-Free Description This HEXFET® Power MOSFET utilizes the latest processing techniques to achieve extremely low on-resistance per silicon area. Additional features of this design are a 175°C junction operating temperature, fast switching speed and improved repetitive avalanche rating. These features combine to make this design an extremely efficient and reliable device for use in a wide variety of applications. G HEXFET® Power MOSFET D VDSS = 55V RDS(on) = 5.
Published: |