Datasheet Summary
- 95509A
Features l Advanced Process Technology l Ultra Low On-Resistance l 175°C Operating Temperature l Fast Switching l Repetitive Avalanche Allowed up to Tjmax l Lead-Free
Description This HEXFET® Power MOSFET utilizes the latest processing techniques to achieve extremely low on-resistance per silicon area. Additional Features of this design are a 175°C junction operating temperature, fast switching speed and improved repetitive avalanche rating. These Features bine to make this design an extremely efficient and reliable device for use in a wide variety of applications.
HEXFET® Power MOSFET
VDSS = 55V RDS(on) = 5.3mΩ S ID = 95A
S GD TO-247AC
Absolute Maximum...
