IRFP150VPBF mosfet equivalent, power mosfet.
Recovery dv/dt Test Circuit
D.U.T*
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Circuit Layout Considerations
* Low Stray Inductance
* Ground Plane
* Low Leakage Inductance Current Transformer
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The TO-247 package is preferred for commercial-industrial applications where higher power levels preclude the use of TO.
Advanced HEXFET® Power MOSFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET .
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