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IRFP150 - N-Channel Power MOSFETs

General Description

These are N-Channel enhancement mode silicon gate power field effect transistors.

They are advanced power MOSFETs designed, tested, and guaranteed to withstand a specified level of energy in the breakdown avalanche mode of operation.

Key Features

  • 34A and 40A, 60V and 100V.
  • rDS(ON) = 0.055Ω and 0.08Ω.
  • Single Pulse Avalanche Energy Rated.
  • SOA is Power Dissipation Limited.
  • Nanosecond Switching Speeds.
  • Linear Transfer Characteristics.
  • High Input Impedance.
  • Related Literature - TB334 “Guidelines for Soldering Surface Mount Components to PC Boards” Ordering Information PART NUMBER.

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Datasheet Details

Part number IRFP150
Manufacturer Harris
File Size 48.97 KB
Description N-Channel Power MOSFETs
Datasheet download datasheet IRFP150 Datasheet

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Other Datasheets by Harris

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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Semiconductor July 1998 IRFP150, IRFP151, IRFP152, IRFP153 34A and 40A, 60V and 100V, 0.055 and 0.08 Ohm, N-Channel Power MOSFETs Features • 34A and 40A, 60V and 100V • rDS(ON) = 0.055Ω and 0.08Ω • Single Pulse Avalanche Energy Rated • SOA is Power Dissipation Limited • Nanosecond Switching Speeds • Linear Transfer Characteristics • High Input Impedance • Related Literature - TB334 “Guidelines for Soldering Surface Mount Components to PC Boards” Ordering Information PART NUMBER PACKAGE BRAND IRFP150 TO-247 IRFP150 IRFP151 TO-247 IRFP151 IRFP152 TO-247 IRFP152 IRFP153 TO-247 IRFP153 NOTE: When ordering, include the entire part number. Description These are N-Channel enhancement mode silicon gate power field effect transistors.