Datasheet4U Logo Datasheet4U.com

IRFP150 - N-Channel MOSFET

Key Features

  • Low drain-source on-resistance: RDS(ON) ≤55mΩ @VGS=10V.
  • Enhancement mode: Vth = 2.0 to 4.0V (VDS = 10 V, ID=0.25mA).
  • 100% avalanche tested.
  • Minimum Lot-to-Lot variations for robust device performance and reliable operation.

📥 Download Datasheet

📁 Similar Datasheet

Part Number Description Manufacturer
IRFP150 (IRFP150 - IRFP153) HIGH VOLTAGE POWER MOSFET DIE IXYS Corporation
IRFP150 N-Channel Power MOSFETs Harris
IRFP150 N-Channel MOSFET STMicroelectronics
IRFP150 Power MOSFET Vishay
IRFP150 N-Channel Power MOSFET Fairchild Semiconductor

Other Datasheets by Inchange Semiconductor

Part Number Description
IRFP150M N-Channel MOSFET
IRFP150MPBF N-Channel MOSFET
IRFP15N60L N-Channel MOSFET
IRFP140 N-Channel MOSFET
IRFP1405 N-Channel MOSFET

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

View original datasheet text
iscN-Channel MOSFET Transistor IRFP150 ·FEATURES ·Low drain-source on-resistance: RDS(ON) ≤55mΩ @VGS=10V ·Enhancement mode: Vth = 2.0 to 4.0V (VDS = 10 V, ID=0.25mA) ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation ·DESCRITION ·Switching Voltage Regulators ·ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VDSS Drain-Source Voltage 100 V VGS Gate-Source Voltage ±20 V ID Drain Current-Continuous 41 A IDM Drain Current-Single Pulsed 160 A PD Total Dissipation @TC=25℃ 230 W Tj Max. Operating Junction Temperature -55~175 ℃ Tstg Storage Temperature -55~175 ℃ ·THERMAL CHARACTERISTICS SYMBOL PARAMETER Rth(ch-c) Channel-to-case thermal resistance MAX 0.65 UNIT ℃/W isc website：www.iscsemi.