Inchange Semiconductor IRFP150
N-Channel MOSFET
| Part No. | IRFP150 |
|---|---|
| Datasheet | IRFP150 Download |
| Manufacturer |  Inchange Semiconductor |
| Description | N-Channel MOSFET |
| Buy | Stock & Price |
FEATURES
●Low drain-source on-resistance: RDS(ON) ≤55mΩ @VGS=10V●Enhancement mode: Vth = 2.0 to 4.0V (VDS = 10 V, ID=0.25mA)
●100% avalanche tested
●Minimum Lot-to-Lot variations for robust device performance and reliable operation
●DESCRITION
●Switching Voltage Regulators
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ABSOLUTE MAXIMUM RATINGS
(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VDSS Drain-Source Voltage 100 V VGS Gate-Source Voltage ±20 V ID Drain Current-Continuous 41 A IDM Drain Current-Single Pulsed 160 A PD Total Dissipation @TC=25℃ 230 W Tj Max. Operating Junction Temperature -55~175 ℃ Tstg Storage Temperature -55~175 ℃●THERMAL CHARACTERISTICS SYMBOL PARAMETER Rth(ch-c) Channel-to-case thermal resistance MAX 0.65 UNIT ℃/W isc website： 1 isc & iscsemi is registered trademark iscN-Channel MOSFET Transistor
ELECTRICAL CHARACTERISTICS
TC=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS BVDSS Drain-Source Breakdown Voltage VGS=0V; ID= 0.25mA VGS(th) Gate Threshold Voltage VDS= 10V; ID=0.25mA RDS(on) Drain-Source On-Re...