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IRFP150N - N-Channel Power MOSFET

Key Features

  • Ultra Low On-Resistance - rDS(ON) = 0.030Ω, VGS = 10V.
  • Simulation Models - Temperature Compensated PSPICE™ and SABER© Electrical Models - Spice and SABER© Thermal Impedance Models - www. fairchildsemi. com.
  • Peak Current vs Pulse Width Curve DRAIN (TAB).
  • UIS Rating Curve Ordering Information Symbol D PART NUMBER IRFP150N.

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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IRFP150N Data Sheet January 2002 44A, 100V, 0.030 Ohm, N-Channel Power MOSFET Packaging JEDEC TO-247 SOURCE DRAIN GATE Features • Ultra Low On-Resistance - rDS(ON) = 0.030Ω, VGS = 10V • Simulation Models - Temperature Compensated PSPICE™ and SABER© Electrical Models - Spice and SABER© Thermal Impedance Models - www.fairchildsemi.com • Peak Current vs Pulse Width Curve DRAIN (TAB) • UIS Rating Curve Ordering Information Symbol D PART NUMBER IRFP150N PACKAGE TO-247 BRAND IRFP150N G S Absolute Maximum Ratings TC = 25oC, Unless Otherwise Specified IRFP150N UNITS Drain to Source Voltage (Note 1) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . VDSS Drain to Gate Voltage (RGS = 20kΩ) (Note 1) . . . . . . . . . . . . . . . . . . . . . . . . . . . . .