| Part Number | IRFP150N Datasheet |
|---|---|
| Manufacturer | International Rectifier |
| Overview |
Fifth Generation HEXFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the fast switching spe.
ar Derating Factor Gate-to-Source Voltage Single Pulse Avalanche Energy
Avalanche Current
Repetitive Avalanche Energy Peak Diode Recovery dv/dt * Operating Junction and Storage Temperature Range Soldering Temperature, for 10 seconds Mounting torque, 6-32 or M3 srew Thermal Resistance RθJC Rθ. |
IRFP150N Datasheet and Specifications PDF
The IRFP150N is a Power MOSFET.
Key Specifications
| Package | TO-247-3 |
|---|---|
| Mount Type | Through Hole |
| Pins | 3 |
| Height | 24.99 mm |
| Length | 15.875 mm |
| Width | 5.3 mm |
| Max Operating Temp | 175 °C |
| Min Operating Temp | -55 °C |
| Part Number | IRFP150N Datasheet |
|---|---|
| Description | N-Channel Power MOSFET |
| Manufacturer | Fairchild Semiconductor |
| Overview |
IRFP150N
Data Sheet January 2002
44A, 100V, 0.030 Ohm, N-Channel Power MOSFET Packaging
JEDEC TO-247
SOURCE DRAIN GATE
Features
• Ultra Low On-Resistance - rDS(ON) = 0.030Ω, VGS = 10V • Simulation M.
* Ultra Low On-Resistance - rDS(ON) = 0.030Ω, VGS = 10V * Simulation Models - Temperature Compensated PSPICE™ and SABER© Electrical Models - Spice and SABER© Thermal Impedance Models - * Peak Current vs Pulse Width Curve DRAIN (TAB) * UIS Rating Curve Ordering Information Sy. |
| Part Number | IRFP150N Datasheet |
|---|---|
| Description | N-Channel MOSFET Transistor |
| Manufacturer | Inchange Semiconductor |
| Overview |
isc N-Channel MOSFET Transistor
IRFP150N，IIRFP150N
·FEATURES ·Static drain-source on-resistance:
RDS(on)≤36mΩ ·Enhancement mode: ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust devi.
*Static drain-source on-resistance: RDS(on)≤36mΩ *Enhancement mode: *100% avalanche tested *Minimum Lot-to-Lot variations for robust device performance and reliable operation *DESCRITION *Fast switching *Fully Avalanche Rated *ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE VDSS Drain. |
| Part Number | IRFP150N Datasheet |
|---|---|
| Description | Power MOSFET |
| Manufacturer | ARTS CHIP |
| Overview | Fifth Generation HEXFETs from Artschip utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggediz. z Avalanche Process Technology z Dynamic dv/dt Rating z 175 Operating Temperature z Fast Switching z Fully Avalanche Rated Description Fifth Generation HEXFETs from Artschip utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with th. |