IRFP150MPbF Overview
Description
IR MOSFET™ technology from Infineon utilizes advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the fast switching speed and rugged device design that IR MOSFET™ devices are well known for, provides the designer with an extremely efficient and reliable device for use in a wide variety of applications.
Key Features
- Advanced Process Technology
- Dynamic dv/dt Rating
- 175°C Operating Temperature
- Fast Switching
- Fully Avalanche Rated