| Part Number | IRFP150MPbF Datasheet |
|---|---|
| Manufacturer | Infineon |
| Overview |
IR MOSFET™ technology from Infineon utilizes advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the fast switching speed and rugged dev.
* Advanced Process Technology * Dynamic dv/dt Rating * 175°C Operating Temperature * Fast Switching * Fully Avalanche Rated * Lead-Free Description IR MOSFET™ technology from Infineon utilizes advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combi. |
IRFP150MPbF Datasheet and Specifications PDF
The IRFP150MPbF is a MOSFET.
Key Specifications
| Package | TO-247-3 |
|---|---|
| Mount Type | Through Hole |
| Pins | 3 |
| Height | 24.99 mm |
| Length | 16.129 mm |
| Width | 4.826 mm |
| Max Operating Temp | 175 °C |
| Min Operating Temp | -55 °C |
| Part Number | IRFP150MPBF Datasheet |
|---|---|
| Description | Power MOSFET |
| Manufacturer | International Rectifier |
| Overview | • Lead-Free PD - 96291 IRFP150MPbF Ω 1 03/01/10 IRFP150MPbF 2 IRFP150MPbF 3 IRFP150MPbF 4 IRFP150MPbF 5 IRFP150MPbF 6 . egundo, California 90245, USA Tel: (310) 252-7105 TAC Fax: (310) 252-7903 Visit us at for sales contact information.03/2010 8 . |
| Part Number | IRFP150MPBF Datasheet |
|---|---|
| Description | N-Channel MOSFET |
| Manufacturer | Inchange Semiconductor |
| Overview |
·Designed for use in switch mode power supplies and general
purpose applications.
ABSOLUTE MAXIMUM RATINGS(Ta=25℃)
SYMBOL
PARAMETER
VDSS
Drain-Source Voltage
VGS
Gate-Source Voltage-Continuous
.
*Drain Current *ID= 42A@ TC=25℃ *Drain Source Voltage- : VDSS= 100V(Min) *Static Drain-Source On-Resistance : RDS(on) = 0.036Ω(Max) *Fast Switching *Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION *Designed for use in switch mode power supplies and gen. |