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International Rectifier Electronic Components Datasheet

IRFP2907PBF Datasheet

Power MOSFET

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Typical Applications
l Telecom applications requiring soft start
Benefits
l Advanced Process Technology
l Ultra Low On-Resistance
l Dynamic dv/dt Rating
l 175°C Operating Temperature
l Fast Switching
l Repetitive Avalanche Allowed up to Tjmax
l Lead-Free
Description
This Stripe Planar design of HEXFET® Power MOSFETs
utilizes the lastest processing techniques to achieve
extremely low on-resistance per silicon area. Additional
features of this HEXFET power MOSFET are a 175°C
junction operating temperature, fast switching speed
and improved repetitive avalanche rating. These benefits
combine to make this design an extremely efficient and
reliable device for use in a wide variety of applications.
G
Absolute Maximum Ratings
ID @ TC = 25°C
ID @ TC = 100°C
IDM
PD @TC = 25°C
VGS
EAS
IAR
EAR
dv/dt
TJ
TSTG
Parameter
Continuous Drain Current, VGS @ 10V
Continuous Drain Current, VGS @ 10V
Pulsed Drain Current 
Power Dissipation
Linear Derating Factor
Gate-to-Source Voltage
Single Pulse Avalanche Energy‚
Avalanche Current
Repetitive Avalanche Energy‡
Peak Diode Recovery dv/dt ƒ
Operating Junction and
Storage Temperature Range
Soldering Temperature, for 10 seconds
Mounting Torque, 6-32 or M3 screw
Thermal Resistance
RθJC
RθCS
RθJA
www.irf.com
Parameter
Junction-to-Case
Case-to-Sink, Flat, Greased Surface
Junction-to-Ambient
PD -95050C
IRFP2907PbF
HEXFET® Power MOSFET
D
VDSS = 75V
RDS(on) = 4.5mΩ
S ID = 209A†
TO-247AC
Max.
209†
148†
840
470
3.1
± 20
1970
See Fig.12a, 12b, 15, 16
5.0
-55 to + 175
300 (1.6mm from case )
10 lbf•in (1.1N•m)
Typ.
–––
0.24
–––
Max.
0.32
–––
40
Units
A
W
W/°C
V
mJ
A
mJ
V/ns
°C
Units
°C/W
1
08/08/11


International Rectifier Electronic Components Datasheet

IRFP2907PBF Datasheet

Power MOSFET

No Preview Available !

IRFP2907PbF
Electrical Characteristics @ TJ = 25°C (unless otherwise specified)
V(BR)DSS
ΔV(BR)DSS/ΔTJ
RDS(on)
VGS(th)
gfs
Parameter
Drain-to-Source Breakdown Voltage
Breakdown Voltage Temp. Coefficient
Static Drain-to-Source On-Resistance
Gate Threshold Voltage
Forward Transconductance
IDSS Drain-to-Source Leakage Current
IGSS
Qg
Qgs
Qgd
td(on)
tr
td(off)
tf
Gate-to-Source Forward Leakage
Gate-to-Source Reverse Leakage
Total Gate Charge
Gate-to-Source Charge
Gate-to-Drain ("Miller") Charge
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
LD Internal Drain Inductance
Min. Typ. Max.
75 ––– –––
––– 0.085 –––
––– 3.6 4.5
2.0 ––– 4.0
130 ––– –––
––– ––– 20
––– ––– 250
––– ––– 200
––– ––– -200
––– 410 620
––– 92 140
––– 140 210
––– 23 –––
––– 190 –––
––– 130 –––
––– 130 –––
––– 5.0 –––
LS Internal Source Inductance
––– 13 –––
Ciss Input Capacitance
––– 13000 –––
Coss
Crss
Output Capacitance
Reverse Transfer Capacitance
––– 2100 –––
––– 500 –––
Coss
Coss
Output Capacitance
Output Capacitance
––– 9780 –––
––– 1360 –––
Coss eff.
Effective Output Capacitance …
––– 2320 –––
Source-Drain Ratings and Characteristics
Units
V
V/°C
mΩ
V
S
μA
nA
nC
ns
nH
pF
Conditions
VGS = 0V, ID = 250μA
Reference to 25°C, ID = 1mA
VGS = 10V, ID = 125A „
VDS = 10V, ID = 250μA
VDS = 25V, ID = 125A
VDS = 75V, VGS = 0V
VDS = 60V, VGS = 0V, TJ = 150°C
VGS = 20V
VGS = -20V
ID = 125A
VDS = 60V
VGS = 10V„
VDD = 38V
ID = 125A
RG = 1.2Ω
VGS = 10V „
Between lead,
D
6mm (0.25in.)
from package
G
and center of die contact
VGS = 0V
VDS = 25V
ƒ = 1.0MHz, See Fig. 5
S
VGS = 0V, VDS = 1.0V, ƒ = 1.0MHz
VGS = 0V, VDS = 60V, ƒ = 1.0MHz
VGS = 0V, VDS = 0V to 60V
Parameter
IS Continuous Source Current
(Body Diode)
ISM Pulsed Source Current
(Body Diode) 
VSD Diode Forward Voltage
trr Reverse Recovery Time
Qrr Reverse RecoveryCharge
ton Forward Turn-On Time
Min. Typ. Max. Units
Conditions
––– ––– 209†
––– ––– 840
A
MOSFET symbol
showing the
integral reverse
p-n junction diode.
G
D
S
––– ––– 1.3 V TJ = 25°C, IS = 125A, VGS = 0V „
––– 140 210 ns TJ = 25°C, IF = 125A
––– 880 1320 nC di/dt = 100A/μs „
Intrinsic turn-on time is negligible (turn-on is dominated by LS+LD)
Notes:
 Repetitive rating; pulse width limited by
max. junction temperature. (See fig. 11).
‚ Starting TJ = 25°C, L = 0.25mH
RG = 25Ω, IAS = 125A. (See Figure 12).
ƒ ISD 125A, di/dt 260A/μs, VDD V(BR)DSS,
TJ 175°C
„ Pulse width 400μs; duty cycle 2%.
2
… Coss eff. is a fixed capacitance that gives the same charging time
as Coss while VDS is rising from 0 to 80% VDSS .
† Calculated continuous current based on maximum allowable
junction temperature. Package limitation current is 90A.
‡ Limited by TJmax , see Fig.12a, 12b, 15, 16 for typical repetitive
avalanche performance.
www.irf.com


Part Number IRFP2907PBF
Description Power MOSFET
Maker International Rectifier
Total Page 9 Pages
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