IRFP2907PbF - Power MOSFET

Infineon

General Description

This Stripe Planar design of HEXFET Power MOSFETs utilizes the latest processing techniques to achieve extremely low on-resistance per silicon area.

Key Features

Advanced Process Technology.
Ultra Low On-Resistance.
Dynamic dv/dt Rating.
175°C Operating Temperature.
Fast Switching.
Repetitive Avalanche Allowed up to Tjmax.
Lead-Free.

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IRFP2907PbF power mosfet by Infineon - Datasheet Preview

Datasheet Details

Part number	IRFP2907PbF
Manufacturer	Infineon
File Size	1.37 MB
Description	Power MOSFET
Datasheet	IRFP2907PbF Datasheet

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Full PDF Text Transcription (Reference)

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IRFP2907PbF V(BR)DSS RDS(on) max. ID 75V 4.5m 209A Typical Applications • Telecom applications requiring soft start TO-247AC Features • Advanced Process Technology • Ultra Low On-Resistance • Dynamic dv/dt Rating • 175°C Operating Temperature • Fast Switching • Repetitive Avalanche Allowed up to Tjmax • Lead-Free Description This Stripe Planar design of HEXFET Power MOSFETs utilizes the latest processing techniques to achieve extremely low on-resistance per silicon area. Additional features of this HEXFET power MOSFET are a 175°C junction operating temperature, fast switching speed and improved repetitive avalanche rating.