IRFP2907ZPBF Datasheet | International Rectifier

Features l l l l l l Advanced Process Technology Ultra Low On-Resistance 175°C Operating Temperature Fast Switching Repetitive Avalanche Allowed up to Tjmax Lead-Free HEXFET® Power MOSFET VDSS = 75V RDS(on) = 4.5mΩ‰ Description Specifically designed for Automotive applications, this HEXFET® Power MOSFET utilizes the latest processing techniques to achieve extremely low on-resistance per silicon area. Additional features of this design are a 175°C junction operating temperature, fast switching speed and improved repetitive avalanche rating . These features bine to make this design an extremely efficient and reliable device for use in Automotive applications and a wide variety of other applications. ID = 90A TO-247AC Absolute Maximum Ratings Parameter ID @ TC = 25°C ID @ TC = 100°C ID @ TC = 25°C IDM PD @TC = 25°C VGS EAS EAS (tested) IAR EAR TJ TSTG Continuous Drain Current, VGS @ 10V (Silicon Limited) Continuous Drain Current, VGS @ 10V (See Fig. 9) Continuous Drain Current, VGS @ 10V (Package Limited) Pulsed Drain Current Max. 170 120 90 680 310 2.0 ± 20 520 690 See Fig.12a,12b,15,16 -55 to + 175 300 (1.6mm from case ) 10 lbf- in (1.1N- m) Units ™ Maximum Power Dissipation Linear Derating Factor Gate-to-Source Voltage Single Pulse Avalanche Energy (Thermally Limited) Single Pulse Avalanche Energy Tested Value Avalanche Current W W/°C V m J A m J °C ™ i d Repetitive Avalanche Energy Operating Junction and Storage Temperature Range h Soldering Temperature, for 10 seconds Mounting torque, 6-32 or M3 screw Thermal Resistance RθJC RθCS RθJA Junction-to-Case j Parameter Typ. Max. - - - 40 Units °C/W Case-to-Sink, Flat, Greased Surface Junction-to-Ambient j jà - - - 0.24 - - - HEXFET® is a registered trademark of International Rectifier. .irf....